Part Details for BSS123 by Diodes Incorporated
Results Overview of BSS123 by Diodes Incorporated
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS123 Information
BSS123 by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS123
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 140 |
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RFQ |
Part Details for BSS123
BSS123 CAD Models
BSS123 Part Data Attributes
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BSS123
Diodes Incorporated
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Datasheet
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BSS123
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS123
This table gives cross-reference parts and alternative options found for BSS123. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BSS123D87Z | Texas Instruments | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123 vs BSS123D87Z |
| BSS123TA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | BSS123 vs BSS123TA |
| BSS123-D87Z | National Semiconductor Corporation | Check for Price | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | BSS123 vs BSS123-D87Z |
| BSS123/S62Z | Texas Instruments | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123 vs BSS123/S62Z |
| BSS123E6433 | Siemens | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123 vs BSS123E6433 |
| BSS123E6327 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123 vs BSS123E6327 |
| BSS123 | Galaxy Microelectronics | Check for Price | Small Signal Field-Effect Transistor, | BSS123 vs BSS123 |
| BSS123LT3 | Motorola Mobility LLC | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123 vs BSS123LT3 |
BSS123 Frequently Asked Questions (FAQ)
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The BSS123 can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 1V and 20V.
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The maximum continuous drain current (Id) rating for the BSS123 is 1A, but it can handle up to 2A for short pulses.
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To protect the BSS123 from ESD, use proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats, and ensure that the device is properly grounded during assembly.
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Yes, the BSS123 can be used as a switch in high-frequency applications up to 100 kHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout and decoupling to minimize ringing and oscillations.