Part Details for BSS123-G by onsemi
Results Overview of BSS123-G by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS123-G Information
BSS123-G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS123-G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
38AH6534
|
Newark | N-Channel Logic Level Enhancement Mode Field Effect Transistor/Reel |Onsemi BSS123-G RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
DISTI #
87871862
|
Verical | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 2596 Package Multiple: 1 Date Code: 2201 | Americas - 38958 |
|
$0.1445 | Buy Now |
|
DISTI #
88058739
|
Verical | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 2596 Package Multiple: 1 Date Code: 2301 | Americas - 15000 |
|
$0.1445 | Buy Now |
|
DISTI #
87871860
|
Verical | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 2596 Package Multiple: 1 Date Code: 1901 | Americas - 8926 |
|
$0.1445 | Buy Now |
|
|
Rochester Electronics | BSS123-G Status: Obsolete Min Qty: 1 | 62884 |
|
$0.0717 / $0.1156 | Buy Now |
|
DISTI #
BSS123-G
|
Avnet Silica | NChannel Logic Level Enhancement Mode Field Effect Transistor 100V 017A 6Ohm 100V 0 (Alt: BSS123-G) RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for BSS123-G
BSS123-G CAD Models
BSS123-G Part Data Attributes
|
|
BSS123-G
onsemi
Buy Now
Datasheet
|
Compare Parts:
BSS123-G
onsemi
Small Signal Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.4 pF | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS123-G
This table gives cross-reference parts and alternative options found for BSS123-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSS123D87Z | Texas Instruments | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123-G vs BSS123D87Z |
| BSS123TA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | BSS123-G vs BSS123TA |
| BSS123-D87Z | National Semiconductor Corporation | Check for Price | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | BSS123-G vs BSS123-D87Z |
| BSS123/S62Z | Texas Instruments | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123-G vs BSS123/S62Z |
| BSS123E6433 | Siemens | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123-G vs BSS123E6433 |
| BSS123E6327 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS123-G vs BSS123E6327 |
| BSS123 | Galaxy Microelectronics | Check for Price | Small Signal Field-Effect Transistor, | BSS123-G vs BSS123 |
| BSS123LT3 | Motorola Mobility LLC | Check for Price | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS123-G vs BSS123LT3 |
BSS123-G Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the BSS123-G is -55°C to 150°C.
-
Yes, the BSS123-G is suitable for high-frequency switching applications due to its low capacitance and fast switching times.
-
Yes, the BSS123-G can be used in high-voltage applications up to 500V, making it suitable for power supply and motor control applications.
-
The BSS123-G is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
-
The typical gate charge of the BSS123-G is around 10nC, which is relatively low and makes it suitable for high-frequency switching applications.