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Part Details for BSP613P by Infineon Technologies AG
Results Overview of BSP613P by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Transportation and Logistics
Energy and Power Systems
Renewable Energy
Automotive
Robotics and Drones
BSP613P Information
BSP613P by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSP613P
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1121 |
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RFQ | |
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Win Source Electronics | SIPMOS Small-Signal-Transistor | 247788 |
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$0.1885 / $0.2434 | Buy Now |
Part Details for BSP613P
BSP613P CAD Models
BSP613P Part Data Attributes
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BSP613P
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSP613P
Infineon Technologies AG
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SOT-223 | |
| Package Description | ROHS COMPLIANT, SOT-223, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.9 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Pulsed Drain Current-Max (IDM) | 11.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSP613P
This table gives cross-reference parts and alternative options found for BSP613P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP613P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDT2955 | onsemi | $0.3093 | P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, SOT-223-4 / TO-261-4, 4000-REEL | BSP613P vs NDT2955 |
| BSP170PL6327 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | BSP613P vs BSP170PL6327 |
| BSP170P | Siemens | Check for Price | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | BSP613P vs BSP170P |
| IRFL9014TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | BSP613P vs IRFL9014TRPBF |
| IRFL9014PBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 | BSP613P vs IRFL9014PBF |
| NDT2955 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | BSP613P vs NDT2955 |
| NDT2955 | Rochester Electronics LLC | Check for Price | 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET | BSP613P vs NDT2955 |
| IRFL9014 | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | BSP613P vs IRFL9014 |
| RFT1P06E | Intersil Corporation | Check for Price | 1.4A, 60V, 0.285ohm, P-CHANNEL, Si, POWER, MOSFET | BSP613P vs RFT1P06E |
BSP613P Frequently Asked Questions (FAQ)
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Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
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The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
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Handle the device by the body, not the leads. Use an ESD wrist strap or mat, and ensure the PCB has ESD protection components, such as TVS diodes or ESD arrays, to prevent damage.
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The recommended gate resistor value is between 10Ω and 100Ω, depending on the specific application and switching frequency. A lower value can improve switching speed, but may increase power losses.