Datasheets
BSP100 by:

3.5A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for BSP100 by NXP Semiconductors

Results Overview of BSP100 by NXP Semiconductors

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Applications Consumer Electronics Aerospace and Defense Healthcare Energy and Power Systems

BSP100 Information

BSP100 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSP100

Part # Distributor Description Stock Price Buy
ComSIT USA N-CHANNEL ENHANCEMENT MODE TRENCHMOS TRANSISTOR Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant Stock DE - 4060
Stock ES - 850
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for BSP100

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BSP100 Part Data Attributes

BSP100 NXP Semiconductors
Buy Now Datasheet
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BSP100 NXP Semiconductors 3.5A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer NXP
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 5 W
Power Dissipation-Max (Abs) 8.3 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 75 ns
Turn-on Time-Max (ton) 40 ns

Alternate Parts for BSP100

This table gives cross-reference parts and alternative options found for BSP100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSP100,135 Nexperia Check for Price BSP100 - N-channel TrenchMOS intermediate level FET@en-us SC-73 4-Pin BSP100 vs BSP100,135
934033440115 NXP Semiconductors Check for Price TRANSISTOR 3.2 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power BSP100 vs 934033440115
934033440135 NXP Semiconductors Check for Price 3.2A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN BSP100 vs 934033440135
BSP100,135 NXP Semiconductors Check for Price BSP100 - N-channel TrenchMOS intermediate level FET SC-73 4-Pin BSP100 vs BSP100,135
BSP100T/R NXP Semiconductors Check for Price TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power BSP100 vs BSP100T/R
IRLMS1503PBF International Rectifier Check for Price Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 BSP100 vs IRLMS1503PBF
IRLMS1503TR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, BSP100 vs IRLMS1503TR
IRLMS1503 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 BSP100 vs IRLMS1503
IRLMS1503PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 BSP100 vs IRLMS1503PBF

BSP100 Related Parts

BSP100 Frequently Asked Questions (FAQ)

  • NXP provides a recommended PCB layout in the BSP100 application note (AN11555) which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and reliability.

  • The BSP100 has a low-power mode that can be enabled by setting the EN pin low. Additionally, the device can be configured to enter a low-power state by setting the appropriate registers. Refer to the BSP100 datasheet and application note for more information on power management.

  • The BSP100 is rated for operation from -40°C to 125°C, but the maximum operating temperature range may vary depending on the specific application and use case. It's recommended to consult with NXP support or a thermal expert to determine the optimal operating temperature range for your specific design.

  • Yes, the BSP100 is a standalone power management IC that can be used with a variety of microcontrollers from different manufacturers. However, the specific interface and configuration may vary depending on the microcontroller used. Consult the BSP100 datasheet and application note for more information on interfacing with different microcontrollers.

  • NXP provides a troubleshooting guide in the BSP100 application note (AN11555) that covers common issues and their solutions. Additionally, NXP support is available to assist with troubleshooting and debugging.

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