Part Details for BSO615NG by Rochester Electronics LLC
Results Overview of BSO615NG by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSO615NG Information
BSO615NG by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSO615NG
BSO615NG CAD Models
BSO615NG Part Data Attributes
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BSO615NG
Rochester Electronics LLC
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Datasheet
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BSO615NG
Rochester Electronics LLC
2.6A, 60V, 0.15ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | SOT | |
| Package Description | ROHS COMPLIANT, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 10.4 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSO615NG
This table gives cross-reference parts and alternative options found for BSO615NG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO615NG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSO615NNT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | BSO615NG vs BSO615NNT |
| BSO615NGXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOP-8 | BSO615NG vs BSO615NGXT |