Part Details for BSO615CG by Infineon Technologies AG
Results Overview of BSO615CG by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSO615CG Information
BSO615CG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSO615CG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 2500 |
|
RFQ |
Part Details for BSO615CG
BSO615CG CAD Models
BSO615CG Part Data Attributes
|
|
BSO615CG
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSO615CG
Infineon Technologies AG
Power Field-Effect Transistor, 3.1A I(D), 60V, 0.11ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, VPS05121, 8 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, VPS05121, 8 PIN | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 47 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 12.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSO615CG
This table gives cross-reference parts and alternative options found for BSO615CG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO615CG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSO615CGHUMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 60V, 0.11ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, VPS05121, 8 PIN | BSO615CG vs BSO615CGHUMA1 |
BSO615CG Frequently Asked Questions (FAQ)
-
Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
-
The selection of a gate driver for the BSO615CG depends on factors such as the switching frequency, voltage, and current requirements. Infineon recommends using their EiceDRIVER™ gate driver family, which is specifically designed for their IGBT modules like the BSO615CG.
-
The maximum allowed overcurrent for the BSO615CG is specified in the datasheet as 2.5 times the nominal current (Ic) for a maximum duration of 10ms. However, it's recommended to consult with Infineon's application engineers for specific guidance on overcurrent protection and fault handling.
-
Yes, the BSO615CG can be used in a parallel configuration to increase the current rating. However, it's essential to ensure that the modules are properly matched, and the system is designed to handle the increased current and thermal requirements. Consult with Infineon's application engineers for guidance on parallel configuration and thermal management.
-
Infineon recommends following standard ESD precautions when handling the BSO615CG, such as using anti-static wrist straps, mats, and packaging materials. The modules should be stored in a dry, cool place, away from direct sunlight and moisture. Consult the datasheet and Infineon's packaging and storage guidelines for more information.