Part Details for BSO604NS2 by Infineon Technologies AG
Results Overview of BSO604NS2 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSO604NS2 Information
BSO604NS2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSO604NS2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,55V V(BR)DSS,5A I(D),SO | 133 |
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$6.1050 / $9.9000 | Buy Now |
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ComSIT USA | OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 5A I(D), 55V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Not Compliant |
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RFQ | |
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LCSC | 55V 5A 35m10V2.5A 2W 1.2V 2 N-Channel DSO-8 MOSFETs ROHS | 20 |
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$1.1195 / $1.1798 | Buy Now |
Part Details for BSO604NS2
BSO604NS2 CAD Models
BSO604NS2 Part Data Attributes
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BSO604NS2
Infineon Technologies AG
Buy Now
Datasheet
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BSO604NS2
Infineon Technologies AG
Power Field-Effect Transistor, 5A I(D), 55V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, DSO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SOT | |
| Package Description | DSO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSO604NS2
This table gives cross-reference parts and alternative options found for BSO604NS2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO604NS2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HAT2038R | Renesas Electronics Corporation | Check for Price | 5A, 60V, 0.084ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 | BSO604NS2 vs HAT2038R |
| SI9945AEY-T1-E3 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | BSO604NS2 vs SI9945AEY-T1-E3 |
| HAT2028R | Renesas Electronics Corporation | Check for Price | 4A, 60V, 0.16ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 | BSO604NS2 vs HAT2028R |
| SI9945AEY | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | BSO604NS2 vs SI9945AEY |
| HUFA76413DK8T | Fairchild Semiconductor Corporation | Check for Price | Automotive MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL | BSO604NS2 vs HUFA76413DK8T |
BSO604NS2 Frequently Asked Questions (FAQ)
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Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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Ensure proper thermal management, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermistor or thermocouple to monitor the device temperature.
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The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
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Yes, the BSO604NS2 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize electromagnetic interference (EMI) and ringing.
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Use a voltage regulator or a TVS (transient voltage suppressor) to protect against overvoltage. For overcurrent protection, use a fuse or a current-sensing resistor with a comparator to detect overcurrent conditions.