Part Details for BSM200GD60DLC by Infineon Technologies AG
Results Overview of BSM200GD60DLC by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSM200GD60DLC Information
BSM200GD60DLC by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSM200GD60DLC
BSM200GD60DLC CAD Models
BSM200GD60DLC Part Data Attributes
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BSM200GD60DLC
Infineon Technologies AG
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Datasheet
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BSM200GD60DLC
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, MODULE-39
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-19 | |
| Pin Count | 39 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 226 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X19 | |
| Number of Elements | 6 | |
| Number of Terminals | 19 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 700 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 326 ns | |
| Turn-on Time-Nom (ton) | 229 ns | |
| VCEsat-Max | 2.45 V |
Alternate Parts for BSM200GD60DLC
This table gives cross-reference parts and alternative options found for BSM200GD60DLC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM200GD60DLC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CM200TU-12F | Powerex Power Semiconductors | Check for Price | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel | BSM200GD60DLC vs CM200TU-12F |
| MWI200-06A8 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19 | BSM200GD60DLC vs MWI200-06A8 |
BSM200GD60DLC Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the BSM200GD60DLC is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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Proper cooling is crucial for the BSM200GD60DLC. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1 K/W. Also, consider using a thermal interface material (TIM) to fill any gaps between the device and heat sink.
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The recommended gate drive voltage for the BSM200GD60DLC is between 15V and 20V, with a maximum of 25V. A higher gate drive voltage can improve switching performance, but be careful not to exceed the maximum rating.
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Yes, the BSM200GD60DLC is suitable for high-frequency switching applications up to 100 kHz. However, be aware of the device's switching losses and ensure that the system is designed to handle the resulting heat generation.
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Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism to prevent damage to the device. The OVP circuit should be designed to clamp the voltage at a level below the device's maximum rating, and the OCP mechanism should be able to detect and respond to overcurrent conditions quickly.