Part Details for BSM180D12P3C007 by ROHM Semiconductor
Results Overview of BSM180D12P3C007 by ROHM Semiconductor
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Industrial Automation
Aerospace and Defense
Agriculture Technology
Robotics and Drones
BSM180D12P3C007 Information
BSM180D12P3C007 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSM180D12P3C007
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
88AH6161
|
Newark | Sic Mosfet, N-Ch, 1.2Kv, 180A, Module, Mosfet Module Configuration:Half Bridge, Channel Type:Dual N Channel, Continuous Drain Current Id:180A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:-, Rds(On) Test Voltage:-, Product Range:- Rohs Compliant: Yes |Rohm BSM180D12P3C007 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$563.2000 | Buy Now |
|
DISTI #
BSM180D12P3C007-ND
|
DigiKey | MOSFET 2N-CH 1200V 180A MODULE Min Qty: 1 Lead time: 22 Weeks Container: Bulk |
13 In Stock |
|
$563.2600 | Buy Now |
|
DISTI #
755-BSM180D12P3C007
|
Mouser Electronics | MOSFET Modules Half Bridge Module SiC UMOSFET & SBD RoHS: Compliant | 12 |
|
$563.2000 | Buy Now |
|
DISTI #
79931340
|
Verical | Trans MOSFET N-CH SiC 1.2KV 180A 10-Pin Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2241 | Americas - 12 |
|
$328.0000 / $347.0000 | Buy Now |
|
DISTI #
64950582
|
Verical | Trans MOSFET N-CH SiC 1.2KV 180A 10-Pin Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2201 | Americas - 10 |
|
$551.9360 | Buy Now |
|
|
Bristol Electronics | 14 |
|
RFQ | ||
|
|
Quest Components | 11 |
|
$683.5986 / $797.5317 | Buy Now | |
|
|
Quest Components | 8 |
|
$569.6655 / $664.6098 | Buy Now | |
|
DISTI #
BSM180D12P3C007
|
Avnet Silica | SiC Power Module1200V180A (Alt: BSM180D12P3C007) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 31 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for BSM180D12P3C007
BSM180D12P3C007 CAD Models
BSM180D12P3C007 Part Data Attributes
|
|
BSM180D12P3C007
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
BSM180D12P3C007
ROHM Semiconductor
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | MODULE-10 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 180 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X10 | |
| Number of Elements | 2 | |
| Number of Terminals | 10 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 880 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
BSM180D12P3C007 Frequently Asked Questions (FAQ)
-
A recommended PCB layout for optimal thermal performance would be to have a large copper area on the bottom layer connected to the thermal pad, and to use thermal vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
-
To ensure proper soldering, use a soldering iron with a temperature of 350°C to 370°C, and apply a small amount of solder paste to the pads. Use a soldering technique that minimizes the time the iron is in contact with the device.
-
The recommended storage condition for the device is in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%. Avoid storing the device in direct sunlight or near heat sources.
-
Yes, the BSM180D12P3C007 is suitable for high-reliability applications. ROHM Semiconductor has a rigorous testing and qualification process to ensure the device meets the required standards for reliability.
-
Handle the device by the edges or the body, avoiding touching the pins or electrical connections. Use an anti-static wrist strap or mat to prevent electrostatic discharge damage.