-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for BSM15GP120 by Infineon Technologies AG
Results Overview of BSM15GP120 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSM15GP120 Information
BSM15GP120 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSM15GP120
BSM15GP120 CAD Models
BSM15GP120 Part Data Attributes
|
|
BSM15GP120
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSM15GP120
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-24 | |
| Pin Count | 24 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 35 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X24 | |
| Number of Elements | 7 | |
| Number of Terminals | 24 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 465 ns | |
| Turn-on Time-Nom (ton) | 121 ns | |
| VCEsat-Max | 2.55 V |
Alternate Parts for BSM15GP120
This table gives cross-reference parts and alternative options found for BSM15GP120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM15GP120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MUBW10-12A7 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, | BSM15GP120 vs MUBW10-12A7 |
| SKIIP20NAB12I | SEMIKRON | Check for Price | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 30 PIN | BSM15GP120 vs SKIIP20NAB12I |
| SKIIP22NAB12 | SEMIKRON | Check for Price | Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-31 | BSM15GP120 vs SKIIP22NAB12 |
| SKIIP20NAB12 | SEMIKRON | Check for Price | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 30 PIN | BSM15GP120 vs SKIIP20NAB12 |
| MUBW15-12A7 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, | BSM15GP120 vs MUBW15-12A7 |
| SKIIP22NAB12I | SEMIKRON | Check for Price | Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-31 | BSM15GP120 vs SKIIP22NAB12I |
BSM15GP120 Frequently Asked Questions (FAQ)
-
The maximum operating frequency of the BSM15GP120 is 20 kHz, but it can be used up to 50 kHz with some limitations.
-
Proper thermal management can be achieved by ensuring good heat sink contact, using a thermal interface material, and maintaining a maximum junction temperature of 150°C.
-
The recommended gate resistor value is between 10 ohms and 20 ohms, depending on the specific application and switching frequency.
-
Yes, the BSM15GP120 can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management between the modules.
-
The maximum allowed voltage imbalance between the DC links is ±10% of the nominal DC voltage to ensure proper operation and prevent damage to the module.