Part Details for BSM100GD60DLC by Infineon Technologies AG
Results Overview of BSM100GD60DLC by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSM100GD60DLC Information
BSM100GD60DLC by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSM100GD60DLC
BSM100GD60DLC CAD Models
BSM100GD60DLC Part Data Attributes
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BSM100GD60DLC
Infineon Technologies AG
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Datasheet
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BSM100GD60DLC
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ECONO3, 39 PIN | |
| Pin Count | 39 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 130 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X39 | |
| Number of Elements | 6 | |
| Number of Terminals | 39 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 430 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 180 ns | |
| Turn-on Time-Nom (ton) | 36 ns | |
| VCEsat-Max | 2.45 V |
Alternate Parts for BSM100GD60DLC
This table gives cross-reference parts and alternative options found for BSM100GD60DLC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GD60DLC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MG100J6ES50 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94A2A, 19 PIN, Insulated Gate BIP Transistor | BSM100GD60DLC vs MG100J6ES50 |
| CM100TU-12F | Mitsubishi Electric | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, | BSM100GD60DLC vs CM100TU-12F |
| 6MBI100F-060 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel | BSM100GD60DLC vs 6MBI100F-060 |
| MWI100-06A8 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19 | BSM100GD60DLC vs MWI100-06A8 |
BSM100GD60DLC Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the BSM100GD60DLC is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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Proper cooling is crucial for the BSM100GD60DLC. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of ≤ 1 K/W. Also, consider using a thermal interface material (TIM) to fill any gaps between the device and heat sink.
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The recommended gate drive voltage for the BSM100GD60DLC is between 15 V and 20 V. This ensures proper switching and minimizes losses. However, the exact voltage may vary depending on the specific application and requirements.
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Yes, the BSM100GD60DLC can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
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The recommended dead time for the BSM100GD60DLC is typically in the range of 100 ns to 500 ns, depending on the specific application and switching frequency. A longer dead time can help reduce losses, but may also increase the risk of shoot-through currents.