Part Details for BSM100GD60DLC by Eupec Gmbh & Co Kg
Results Overview of BSM100GD60DLC by Eupec Gmbh & Co Kg
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSM100GD60DLC Information
BSM100GD60DLC by Eupec Gmbh & Co Kg is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSM100GD60DLC
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | IGBT-MODULE Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel ECCN: EAR99 RoHS: Not Compliant |
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RFQ |
Part Details for BSM100GD60DLC
BSM100GD60DLC CAD Models
BSM100GD60DLC Part Data Attributes
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BSM100GD60DLC
Eupec Gmbh & Co Kg
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Datasheet
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BSM100GD60DLC
Eupec Gmbh & Co Kg
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | EUPEC GMBH & CO KG | |
| Package Description | ECONO3, 39 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 130 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X39 | |
| Number of Elements | 6 | |
| Number of Terminals | 39 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 430 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 180 ns | |
| Turn-on Time-Nom (ton) | 36 ns | |
| VCEsat-Max | 2.45 V |