Part Details for BSM100GB120DN2HOSA1 by Infineon Technologies AG
Results Overview of BSM100GB120DN2HOSA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSM100GB120DN2HOSA1 Information
BSM100GB120DN2HOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSM100GB120DN2HOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSM100GB120DN2HOSA1-448-ND
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DigiKey | MEDIUM POWER 62MM Min Qty: 2 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
3476 In Stock |
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$197.0600 | Buy Now |
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DISTI #
86096896
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Verical | Trans IGBT Module N-CH 1200V 150A 800W 7-Pin 62MM-1 Min Qty: 2 Package Multiple: 1 Date Code: 1901 | Americas - 1782 |
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$236.8500 | Buy Now |
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DISTI #
86097359
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Verical | Trans IGBT Module N-CH 1200V 150A 800W 7-Pin 62MM-1 Min Qty: 2 Package Multiple: 1 Date Code: 2001 | Americas - 1480 |
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$236.8500 | Buy Now |
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DISTI #
87244175
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Verical | Trans IGBT Module N-CH 1200V 150A 800W 7-Pin 62MM-1 Min Qty: 2 Package Multiple: 1 Date Code: 2401 | Americas - 200 |
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$236.8500 | Buy Now |
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DISTI #
86097085
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Verical | Trans IGBT Module N-CH 1200V 150A 800W 7-Pin 62MM-1 Min Qty: 2 Package Multiple: 1 Date Code: 2201 | Americas - 10 |
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$236.8500 | Buy Now |
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Rochester Electronics | MEDIUM POWER 62MM RoHS: Compliant Status: Obsolete Min Qty: 1 | 3472 |
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$166.7400 / $189.4800 | Buy Now |
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DISTI #
SP000100720
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EBV Elektronik | Transistor IGBT Module NCH 1200V 150A 20V Screw Mount Tray (Alt: SP000100720) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for BSM100GB120DN2HOSA1
BSM100GB120DN2HOSA1 CAD Models
BSM100GB120DN2HOSA1 Part Data Attributes
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BSM100GB120DN2HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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BSM100GB120DN2HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HALF-BRIDGE 2, 7 PIN | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 150 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 470 ns | |
| Turn-on Time-Nom (ton) | 210 ns |
BSM100GB120DN2HOSA1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2019-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a proper cooling system. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature and adjust the system design accordingly.
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Infineon provides a range of recommended gate drive circuits in their application notes and design guides. For the BSM100GB120DN2HOSA1, a suitable gate drive circuit would include a dedicated gate driver IC, such as the 1EDC or 2EDL family, along with a suitable resistor and capacitor network to ensure proper gate voltage and current control.
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To protect the device from overvoltage and overcurrent conditions, implement a suitable protection circuit, such as a voltage clamp or a current sense resistor, along with a fault detection and protection IC. Additionally, ensure that the system design includes proper fusing and overcurrent protection to prevent damage to the device and surrounding components.
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Infineon provides detailed soldering and assembly guidelines in their package datasheet and application notes. For the BSM100GB120DN2HOSA1, follow the recommended soldering temperature profile, use a suitable solder alloy, and ensure proper component alignment and handling to prevent damage during assembly.