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Part Details for BSL307SPL6327HTSA1 by Infineon Technologies AG
Results Overview of BSL307SPL6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSL307SPL6327HTSA1 Information
BSL307SPL6327HTSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSL307SPL6327HTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85973300
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Verical | Trans MOSFET P-CH 30V 5.5A Automotive 6-Pin TSOP T/R RoHS: Compliant Min Qty: 1299 Package Multiple: 1 Date Code: 1401 | Americas - 666689 |
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$0.2889 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 5.5A, 30V, 0.043ohm, P-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 666689 |
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$0.1433 / $0.2311 | Buy Now |
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DISTI #
SP000095798
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EBV Elektronik | Trans MOSFET PCH 30V 55A 6Pin TSOP TR (Alt: SP000095798) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 675634 |
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RFQ |
Part Details for BSL307SPL6327HTSA1
BSL307SPL6327HTSA1 CAD Models
BSL307SPL6327HTSA1 Part Data Attributes
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BSL307SPL6327HTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSL307SPL6327HTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSOP-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP | |
| Package Description | ROHS COMPLIANT, PLASTIC, TSOP-6 | |
| Pin Count | 6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 44 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.043 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSL307SPL6327HTSA1
This table gives cross-reference parts and alternative options found for BSL307SPL6327HTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSL307SPL6327HTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSL307SP | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, PLASTIC, TSOP-6 | BSL307SPL6327HTSA1 vs BSL307SP |
| BSL307SPH6327 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6-1, 6 PIN | BSL307SPL6327HTSA1 vs BSL307SPH6327 |
BSL307SPL6327HTSA1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal pad design, copper thickness, and via placement to ensure optimal thermal performance.
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To ensure reliable operation in high-temperature environments, it's essential to follow Infineon's guidelines for thermal management, including proper heat sink design, thermal interface material selection, and monitoring of junction temperature.
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Infineon recommends following the soldering conditions outlined in their application note AN2013-02, which includes guidelines for reflow soldering, wave soldering, and hand soldering to ensure reliable assembly.
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To troubleshoot issues with the overcurrent protection feature, check the device's datasheet for specific guidance on fault detection and fault handling. Additionally, verify that the device is properly configured and that the current sense resistor is correctly sized.
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Operating the device at the maximum rated voltage may reduce its lifespan and increase the risk of premature failure. It's essential to follow Infineon's guidelines for voltage derating and to ensure that the device is operated within its recommended operating conditions.