Datasheets
BSL307SPL6327 by: Infineon Technologies AG

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSOP-6

Part Details for BSL307SPL6327 by Infineon Technologies AG

Results Overview of BSL307SPL6327 by Infineon Technologies AG

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BSL307SPL6327 Information

BSL307SPL6327 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSL307SPL6327

Part # Distributor Description Stock Price Buy
Chip 1 Exchange INSTOCK 10796
RFQ
Vyrian Transistors 7882
RFQ

Part Details for BSL307SPL6327

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BSL307SPL6327 Part Data Attributes

BSL307SPL6327 Infineon Technologies AG
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BSL307SPL6327 Infineon Technologies AG Power Field-Effect Transistor, 5.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSOP-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TSOP
Package Description ROHS COMPLIANT, PLASTIC, TSOP-6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 44 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSL307SPL6327

This table gives cross-reference parts and alternative options found for BSL307SPL6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSL307SPL6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSL307SP Infineon Technologies AG Check for Price Power Field-Effect Transistor, 5.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, PLASTIC, TSOP-6 BSL307SPL6327 vs BSL307SP
BSL307SPH6327 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 5.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6-1, 6 PIN BSL307SPL6327 vs BSL307SPH6327
BSL307SPL6327HTSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 5.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSOP-6 BSL307SPL6327 vs BSL307SPL6327HTSA1

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