Part Details for BSL306NL6327HTSA1 by Infineon Technologies AG
Results Overview of BSL306NL6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
BSL306NL6327HTSA1 Information
BSL306NL6327HTSA1 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSL306NL6327HTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000442404
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EBV Elektronik | MOSFET DUAL NCh 30V 23A 0057OHM (Alt: SP000442404) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for BSL306NL6327HTSA1
BSL306NL6327HTSA1 CAD Models
BSL306NL6327HTSA1 Part Data Attributes
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BSL306NL6327HTSA1
Infineon Technologies AG
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Datasheet
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BSL306NL6327HTSA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.057 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 17 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSL306NL6327HTSA1
This table gives cross-reference parts and alternative options found for BSL306NL6327HTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSL306NL6327HTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| ZXM62N03E6TC | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN | BSL306NL6327HTSA1 vs ZXM62N03E6TC |
| FDC6305N | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | BSL306NL6327HTSA1 vs FDC6305N |
| FDC6561AN | Rochester Electronics LLC | Check for Price | 2500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | BSL306NL6327HTSA1 vs FDC6561AN |
| FDC6305N | Rochester Electronics LLC | Check for Price | 2700mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | BSL306NL6327HTSA1 vs FDC6305N |
| ZXM62N03E6TC | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN | BSL306NL6327HTSA1 vs ZXM62N03E6TC |
BSL306NL6327HTSA1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the BSL306NL6327HTSA1 in their application note AN2014-03. It includes guidelines for thermal vias, copper thickness, and pad design to ensure optimal thermal performance.
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Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching. Consult Infineon's gate driver selection guide for more information.
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The BSL306NL6327HTSA1 has a maximum allowed overcurrent of 2.5 times the nominal current. To protect the module, use a fast-acting fuse or a current sensing circuit with a shutdown mechanism. Additionally, ensure proper heat sinking and thermal management to prevent overheating.
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Yes, the BSL306NL6327HTSA1 can be used in a parallel configuration, but it requires careful consideration of the module's current sharing, thermal management, and gate drive synchronization. Consult Infineon's application note AN2014-04 for guidelines on paralleling IGBT modules.
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Store the BSL306NL6327HTSA1 in a dry, cool place, away from direct sunlight and moisture. Handle the module by the edges, avoiding touching the electrical contacts or the thermal interface. Use an anti-static wrist strap or mat when handling the module to prevent ESD damage.