Datasheets
BSL305SPEH6327 by: Infineon Technologies AG

Power Field-Effect Transistor, 5.3A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6

Part Details for BSL305SPEH6327 by Infineon Technologies AG

Results Overview of BSL305SPEH6327 by Infineon Technologies AG

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BSL305SPEH6327 Information

BSL305SPEH6327 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSL305SPEH6327

Part # Distributor Description Stock Price Buy
Chip 1 Exchange INSTOCK 3718
RFQ
Wuhan P&S -30V,-5.3A,P-Ch Small-Signal MOSFET Min Qty: 1 2860
  • 1 $0.2700
  • 100 $0.2200
  • 500 $0.2000
  • 1,000 $0.1900
$0.1900 / $0.2700 Buy Now

Part Details for BSL305SPEH6327

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BSL305SPEH6327 Part Data Attributes

BSL305SPEH6327 Infineon Technologies AG
Buy Now Datasheet
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BSL305SPEH6327 Infineon Technologies AG Power Field-Effect Transistor, 5.3A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TSOP-6
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 20 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.3 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 21.2 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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