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Part Details for BSL302SNH6327XTSA1 by Infineon Technologies AG
Results Overview of BSL302SNH6327XTSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Healthcare
Electronic Manufacturing
BSL302SNH6327XTSA1 Information
BSL302SNH6327XTSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSL302SNH6327XTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V79:2366_26427735
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Arrow Electronics | Trans MOSFET N-CH 30V 7.1A Automotive AEC-Q101 6-Pin TSOP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1841 | Americas - 3 |
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$0.1934 | Buy Now |
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Rochester Electronics | 250V-600V Small Signal/Small Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 460 |
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$0.1392 / $0.2245 | Buy Now |
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DISTI #
SP001100662
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EBV Elektronik | Trans MOSFET NCH 30V 71A 6Pin TSOP TR (Alt: SP001100662) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 63 |
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RFQ |
Part Details for BSL302SNH6327XTSA1
BSL302SNH6327XTSA1 CAD Models
BSL302SNH6327XTSA1 Part Data Attributes
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BSL302SNH6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSL302SNH6327XTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 7.1A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TSOP-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 7.1 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for BSL302SNH6327XTSA1
This table gives cross-reference parts and alternative options found for BSL302SNH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSL302SNH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FSS242 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | BSL302SNH6327XTSA1 vs FSS242 |
| BSL302SN | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 7.1A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6 | BSL302SNH6327XTSA1 vs BSL302SN |
BSL302SNH6327XTSA1 Frequently Asked Questions (FAQ)
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Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure good thermal conductivity. A minimum of 5 thermal vias with a diameter of 0.3 mm is recommended.
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Infineon recommends using a reflow soldering process with a peak temperature of 260°C for 20-30 seconds. The device should be placed on a solder paste layer with a thickness of 0.1-0.2 mm.
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The maximum allowed voltage on the gate driver output is 20 V. Exceeding this voltage may damage the device.
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Infineon recommends using an external overcurrent protection circuit and a voltage supervisor to prevent damage from overvoltage conditions.
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The recommended operating frequency range for the BSL302SNH6327XTSA1 is 10 kHz to 100 kHz. Operating outside this range may affect device performance and reliability.