Part Details for BSL211SPH6327 by Infineon Technologies AG
Results Overview of BSL211SPH6327 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSL211SPH6327 Information
BSL211SPH6327 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSL211SPH6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 7 | 1346 |
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$0.1500 / $0.7500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4.7A I(D), 20V, 0.067OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1076 |
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$0.2000 / $1.0000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4.7A I(D), 20V, 0.067OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 142 |
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$0.3000 / $0.4500 | Buy Now |
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ComSIT USA | OPTIMOS-P SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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LCSC | 20V 4.7A 67m4.5V4.7A 2W 1.2V 1 piece P-channel TSOP-6 MOSFETs ROHS | 39 |
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$0.2822 / $0.3003 | Buy Now |
Part Details for BSL211SPH6327
BSL211SPH6327 CAD Models
BSL211SPH6327 Part Data Attributes
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BSL211SPH6327
Infineon Technologies AG
Buy Now
Datasheet
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BSL211SPH6327
Infineon Technologies AG
Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP-6 | |
| Pin Count | 6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.7 A | |
| Drain-source On Resistance-Max | 0.067 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18.8 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |