Part Details for BSH201,215 by NXP Semiconductors
Results Overview of BSH201,215 by NXP Semiconductors
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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BSH201,215 Information
BSH201,215 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSH201,215
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 866 |
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RFQ | ||
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Bristol Electronics | 50 |
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RFQ | ||
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Quest Components | 300 MA, 60 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET | 692 |
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$0.2700 / $0.9000 | Buy Now |
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Quest Components | 300 MA, 60 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET | 208 |
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$0.1800 / $0.6000 | Buy Now |
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Quest Components | 300 MA, 60 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET | 18 |
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$0.1569 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 0.3A, 60V, P-Channel MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 250 |
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$0.0590 / $0.0952 | Buy Now |
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Chip 1 Exchange | INSTOCK | 1700 |
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RFQ | |
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Chip-Germany GmbH | RoHS: Not Compliant | 2965 |
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RFQ | |
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Vyrian | Transistors | 32129 |
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RFQ |
Part Details for BSH201,215
BSH201,215 CAD Models
BSH201,215 Part Data Attributes
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BSH201,215
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
BSH201,215
NXP Semiconductors
BSH201 - P-channel vertical D-MOS logic level FET TO-236 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-236 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT23 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 2.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 0.54 W | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSH201,215
This table gives cross-reference parts and alternative options found for BSH201,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSH201,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSH201,215 | Nexperia | $0.1946 | BSH201 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin | BSH201,215 vs BSH201,215 |
| 934054717215 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BSH201,215 vs 934054717215 |
| BSH201/T3 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BSH201,215 vs BSH201/T3 |
| 934054717215 | NXP Semiconductors | Check for Price | TRANSISTOR 340 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | BSH201,215 vs 934054717215 |
| BSH201 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BSH201,215 vs BSH201 |
BSH201,215 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical and avoid vias under the device. Use a 50-ohm microstrip transmission line for the RF output.
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Use a voltage regulator to maintain a stable 3.3V supply. Ensure the bias voltage (VCC) is decoupled with a 10uF capacitor and a 100nF capacitor in parallel. Add a 1kΩ resistor in series with the bias pin to prevent oscillations.
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The recommended input power level is -20 dBm to 0 dBm. Exceeding this range may cause compression or distortion. Use an attenuator or a variable attenuator to adjust the input power level.
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Use a matching network to optimize the device for a specific frequency band. The matching network should be designed to match the device's input impedance to the source impedance. Use a network analyzer to measure the device's S-parameters and optimize the matching network accordingly.
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The maximum operating temperature for the BSH201,215 is 85°C. Ensure proper heat sinking and thermal management to prevent overheating, which can affect the device's performance and reliability.