Datasheets
BSC900N20NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 15.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC900N20NS3GATMA1 by Infineon Technologies AG

Results Overview of BSC900N20NS3GATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

BSC900N20NS3GATMA1 Information

BSC900N20NS3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC900N20NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 2443372RL
Farnell MOSFET, N CH, 200V, 15.2A, TDSON-8 RoHS: Compliant Min Qty: 100 Lead time: 17 Weeks, 1 Days Container: Reel 6157
  • 100 $0.9748
  • 500 $0.7997
  • 1,000 $0.7221
  • 5,000 $0.6940
$0.6940 / $0.9748 Buy Now
DISTI # 2443372
Farnell MOSFET, N CH, 200V, 15.2A, TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Cut Tape 6157
  • 1 $2.0459
  • 10 $1.3773
  • 100 $0.9748
  • 500 $0.7997
  • 1,000 $0.7221
  • 5,000 $0.6940
$0.6940 / $2.0459 Buy Now
DISTI # BSC900N20NS3GATMA1CT-ND
DigiKey MOSFET N-CH 200V 15.2A TDSON-8 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 24
In Stock
  • 1 $2.2900
  • 10 $1.4700
  • 100 $1.0001
  • 500 $0.7991
  • 1,000 $0.7749
  • 5,000 $0.6331
$0.6331 / $2.2900 Buy Now
DISTI # BSC900N20NS3GATMA1
Avnet Americas Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC900N20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.5137
  • 10,000 $0.5078
  • 20,000 $0.5010
  • 30,000 $0.4951
  • 40,000 $0.4888
$0.4888 / $0.5137 Buy Now
DISTI # E02:0323_02201589
Arrow Electronics Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Europe - 25000
  • 5,000 $0.5237
$0.5237 Buy Now
DISTI # V72:2272_06383703
Arrow Electronics Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2348 Container: Cut Strips Americas - 3140
  • 1 $0.7370
  • 10 $0.6768
  • 25 $0.6644
  • 100 $0.6227
  • 250 $0.6179
  • 500 $0.5747
  • 1,000 $0.5682
  • 3,000 $0.5666
$0.5666 / $0.7370 Buy Now
Future Electronics Single N-Channel 200 V 90 mOhm 9 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Container: Reel 85000
Reel
  • 5,000 $0.5750
$0.5750 Buy Now
Future Electronics Single N-Channel 200 V 90 mOhm 9 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 5,000 $0.5750
$0.5750 Buy Now
DISTI # 69266446
Verical Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R Min Qty: 36 Package Multiple: 1 Date Code: 2318 Americas - 7322
  • 36 $0.7370
  • 5,000 $0.7160
$0.7160 / $0.7370 Buy Now
DISTI # 75716621
Verical Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R Min Qty: 11 Package Multiple: 1 Date Code: 2348 Americas - 3140
  • 11 $0.6768
  • 25 $0.6644
  • 100 $0.6227
  • 250 $0.6179
  • 500 $0.5747
  • 1,000 $0.5682
  • 3,000 $0.5666
$0.5666 / $0.6768 Buy Now
DISTI # 87871398
Verical Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R Min Qty: 350 Package Multiple: 1 Date Code: 2401 Americas - 2980
  • 350 $1.0721
$1.0721 Buy Now
DISTI # 87871358
Verical Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R Min Qty: 350 Package Multiple: 1 Date Code: 2301 Americas - 2114
  • 350 $1.0721
$1.0721 Buy Now
Bristol Electronics   30
RFQ
Rochester Electronics MOSFET N-Channel Single 200V 15.2A RoHS: Compliant Status: Active Min Qty: 1 5094
  • 100 $0.8577
  • 500 $0.7719
  • 1,000 $0.7119
  • 10,000 $0.6347
  • 100,000 $0.5318
$0.5318 / $0.8577 Buy Now
Future Electronics Single N-Channel 200 V 90 mOhm 9 nC OptiMOS� Power Mosfet - TDSON-8 Min Qty: 5000 Package Multiple: 5000 85000
null
  • 5,000 $0.5750
$0.5750 Buy Now
DISTI # BSC900N20NS3GATMA1
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 7322
  • 1 $0.7370
  • 10 $1.6000
  • 50 $1.5500
  • 100 $1.4300
  • 200 $1.3900
  • 500 $0.7510
  • 5,000 $0.7160
$0.7160 / $1.6000 Buy Now
DISTI # SP000781780
EBV Elektronik Trans MOSFET NCH 200V 152A 8Pin TDSON TR (Alt: SP000781780) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 32515
RFQ
Win Source Electronics MOSFET N-CH 200V 15.2A TDSON-8 25000
  • 55 $1.1425
  • 125 $0.9376
  • 195 $0.9082
  • 265 $0.8790
  • 340 $0.8496
  • 455 $0.7618
$0.7618 / $1.1425 Buy Now

Part Details for BSC900N20NS3GATMA1

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BSC900N20NS3GATMA1 Part Data Attributes

BSC900N20NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC900N20NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 15.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 15.2 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 61 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC900N20NS3GATMA1

This table gives cross-reference parts and alternative options found for BSC900N20NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC900N20NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC900N20NS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 15.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC900N20NS3GATMA1 vs BSC900N20NS3G

BSC900N20NS3GATMA1 Related Parts

BSC900N20NS3GATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSC900N20NS3GATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1.5 K/W, and ensuring good airflow around the device.

  • The recommended gate resistor value for the BSC900N20NS3GATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.

  • Yes, the BSC900N20NS3GATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.

  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.

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