Part Details for BSC886N03LSGATMA1 by Infineon Technologies AG
Results Overview of BSC886N03LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC886N03LSGATMA1 Information
BSC886N03LSGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC886N03LSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2617422
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Farnell | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 4976 |
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$0.2057 / $0.2946 | Buy Now |
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DISTI #
2617422RL
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Farnell | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel | 4976 |
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$0.2057 / $0.2521 | Buy Now |
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DISTI #
30579819
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R Min Qty: 208 Package Multiple: 1 | Americas - 8268 |
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$0.1220 / $0.1330 | Buy Now |
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DISTI #
85967155
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R Min Qty: 950 Package Multiple: 1 Date Code: 1501 | Americas - 4825 |
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$0.3951 | Buy Now |
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DISTI #
85966880
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R Min Qty: 950 Package Multiple: 1 Date Code: 1201 | Americas - 4609 |
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$0.3951 | Buy Now |
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DISTI #
85970489
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R Min Qty: 950 Package Multiple: 1 Date Code: 1901 | Americas - 3791 |
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$0.3951 | Buy Now |
Part Details for BSC886N03LSGATMA1
BSC886N03LSGATMA1 CAD Models
BSC886N03LSGATMA1 Part Data Attributes
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BSC886N03LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC886N03LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.0092 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC886N03LSGATMA1
This table gives cross-reference parts and alternative options found for BSC886N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC886N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC889N03LSGE8178 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC886N03LSGATMA1 vs BSC889N03LSGE8178 |
BSC886N03LSGATMA1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal pad design, copper thickness, and via placement to ensure optimal thermal performance.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider using a heat sink or cooling system. Additionally, ensure that the device is operated within the specified junction temperature range (TJ) of -40°C to 175°C.
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The BSC886N03LSGATMA1 has built-in ESD protection, but it's still essential to follow proper ESD handling and storage procedures to prevent damage. Infineon recommends using an ESD wrist strap or mat, and storing the devices in anti-static packaging.
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Yes, the BSC886N03LSGATMA1 is AEC-Q101 qualified, making it suitable for automotive applications. However, it's essential to ensure that the device is used within the specified operating conditions and that the system design meets the required automotive standards.
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Infineon recommends following the soldering conditions specified in their application note AN2013-01, which includes guidelines for reflow soldering, wave soldering, and hand soldering. It's essential to follow these guidelines to prevent damage to the device.