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Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC252N10NSFGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1775477
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Farnell | MOSFET, N CH, 40A, 100V, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Each | 11273 |
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$0.4596 / $1.4213 | Buy Now |
DISTI #
BSC252N10NSFGATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 7.2A/40A TDSON Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
13761 In Stock |
|
$0.4210 / $1.3800 | Buy Now |
DISTI #
BSC252N10NSFGATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC252N10NSFGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.3282 / $0.3416 | Buy Now |
DISTI #
726-BSC252N10NSFGATM
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Mouser Electronics | MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2 RoHS: Compliant | 29893 |
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$0.4210 / $1.3500 | Buy Now |
DISTI #
E02:0323_00274290
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Arrow Electronics | Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Date Code: 2436 | Europe - 35000 |
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$0.3444 | Buy Now |
DISTI #
84863051
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Verical | Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2436 | Americas - 35000 |
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$0.3469 | Buy Now |
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Future Electronics | N-Channel 100 V 2.25 mOhm OptiMOS�2 Power-Transistor - PG-TDSON-8 Min Qty: 5000 Package Multiple: 5000 |
15000 null |
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$0.3100 / $0.3200 | Buy Now |
DISTI #
BSC252N10NSFGATMA1
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IBS Electronics | BSC252N10NSFGATMA1 by Infineon SCT is a 100V N-channel MOSFET with a 2.5mΩ, max RDS(on), 100A continuous current, and optimized for high-speed switching applications. Min Qty: 5000 Package Multiple: 1 | 5000 |
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$0.4030 / $0.4160 | Buy Now |
DISTI #
TMOSP9610
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Rutronik | N-CH 100V 40A 25mOhm TDSON-8 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel |
Stock DE - 70000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.3816 / $0.4947 | Buy Now |
DISTI #
SP000379608
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EBV Elektronik | Trans MOSFET NCH 100V 72A 8Pin TDSON TR (Alt: SP000379608) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days | EBV - 25000 |
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Buy Now |
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BSC252N10NSFGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC252N10NSFGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 68 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 7.2 A | |
Drain-source On Resistance-Max | 0.0252 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC252N10NSFGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC252N10NSFGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSC252N10NSFG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC252N10NSFGATMA1 vs BSC252N10NSFG |
The maximum operating temperature range for the BSC252N10NSFGATMA1 is -40°C to 150°C.
Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
The recommended gate drive voltage for the BSC252N10NSFGATMA1 is 15V, with a maximum of 20V.
Yes, the BSC252N10NSFGATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure all equipment is grounded.