Datasheets
BSC252N10NSFGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC252N10NSFGATMA1 by Infineon Technologies AG

Results Overview of BSC252N10NSFGATMA1 by Infineon Technologies AG

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BSC252N10NSFGATMA1 Information

BSC252N10NSFGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC252N10NSFGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 1775477
Farnell MOSFET, N CH, 40A, 100V, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Each 11273
  • 1 $1.4213
  • 10 $1.0002
  • 100 $0.7651
  • 500 $0.6030
  • 1,000 $0.5074
  • 5,000 $0.4596
$0.4596 / $1.4213 Buy Now
DISTI # BSC252N10NSFGATMA1CT-ND
DigiKey MOSFET N-CH 100V 7.2A/40A TDSON Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) 13761
In Stock
  • 1 $1.3800
  • 10 $0.9650
  • 100 $0.7160
  • 500 $0.5711
  • 1,000 $0.5153
  • 5,000 $0.4224
  • 10,000 $0.4210
$0.4210 / $1.3800 Buy Now
DISTI # BSC252N10NSFGATMA1
Avnet Americas Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC252N10NSFGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.3416
  • 10,000 $0.3377
  • 20,000 $0.3332
  • 30,000 $0.3299
  • 40,000 $0.3282
$0.3282 / $0.3416 Buy Now
DISTI # 726-BSC252N10NSFGATM
Mouser Electronics MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2 RoHS: Compliant 29893
  • 1 $1.3500
  • 10 $0.9460
  • 100 $0.7020
  • 500 $0.5530
  • 1,000 $0.4660
  • 2,500 $0.4650
  • 5,000 $0.4210
$0.4210 / $1.3500 Buy Now
DISTI # E02:0323_00274290
Arrow Electronics Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Date Code: 2436 Europe - 35000
  • 5,000 $0.3444
$0.3444 Buy Now
DISTI # 84863051
Verical Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2436 Americas - 35000
  • 5,000 $0.3469
$0.3469 Buy Now
Future Electronics N-Channel 100 V 2.25 mOhm OptiMOS�2 Power-Transistor - PG-TDSON-8 Min Qty: 5000 Package Multiple: 5000 15000
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  • 5,000 $0.3200
  • 10,000 $0.3100
$0.3100 / $0.3200 Buy Now
DISTI # BSC252N10NSFGATMA1
IBS Electronics BSC252N10NSFGATMA1 by Infineon SCT is a 100V N-channel MOSFET with a 2.5m&#x3A9, max RDS(on), 100A continuous current, and optimized for high-speed switching applications. Min Qty: 5000 Package Multiple: 1 5000
  • 5,000 $0.4160
  • 10,000 $0.4030
$0.4030 / $0.4160 Buy Now
DISTI # TMOSP9610
Rutronik N-CH 100V 40A 25mOhm TDSON-8 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel Stock DE - 70000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 5,000 $0.4947
  • 10,000 $0.4664
  • 15,000 $0.4382
  • 20,000 $0.3958
  • 25,000 $0.3816
$0.3816 / $0.4947 Buy Now
DISTI # SP000379608
EBV Elektronik Trans MOSFET NCH 100V 72A 8Pin TDSON TR (Alt: SP000379608) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days EBV - 25000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 20000
  • 5,000 $0.6700
  • 20,000 $0.6185
$0.6185 / $0.6700 Buy Now
Win Source Electronics MOSFET N-CH 100V 40A TDSON-8 6000
  • 55 $1.0949
  • 130 $0.8984
  • 200 $0.8703
  • 275 $0.8422
  • 355 $0.8142
  • 475 $0.7300
$0.7300 / $1.0949 Buy Now

Part Details for BSC252N10NSFGATMA1

BSC252N10NSFGATMA1 CAD Models

BSC252N10NSFGATMA1 Part Data Attributes

BSC252N10NSFGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC252N10NSFGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 68 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 7.2 A
Drain-source On Resistance-Max 0.0252 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC252N10NSFGATMA1

This table gives cross-reference parts and alternative options found for BSC252N10NSFGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC252N10NSFGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC252N10NSFG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC252N10NSFGATMA1 vs BSC252N10NSFG

BSC252N10NSFGATMA1 Related Parts

BSC252N10NSFGATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSC252N10NSFGATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the BSC252N10NSFGATMA1 is 15V, with a maximum of 20V.

  • Yes, the BSC252N10NSFGATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.

  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure all equipment is grounded.

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