Part Details for BSC252N10NSFG by Infineon Technologies AG
Results Overview of BSC252N10NSFG by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC252N10NSFG Information
BSC252N10NSFG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC252N10NSFG
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 172 |
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RFQ | ||
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LCSC | 100V 40A 78W 25.2m10V20A 4V 1 N-channel TDSON-8 MOSFETs ROHS | 21 |
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$0.8253 / $1.4710 | Buy Now |
Part Details for BSC252N10NSFG
BSC252N10NSFG CAD Models
BSC252N10NSFG Part Data Attributes
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BSC252N10NSFG
Infineon Technologies AG
Buy Now
Datasheet
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BSC252N10NSFG
Infineon Technologies AG
Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 68 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 7.2 A | |
| Drain-source On Resistance-Max | 0.0252 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 78 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC252N10NSFG
This table gives cross-reference parts and alternative options found for BSC252N10NSFG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC252N10NSFG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC252N10NSFGATMA1 | Infineon Technologies AG | $0.7073 | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC252N10NSFG vs BSC252N10NSFGATMA1 |
BSC252N10NSFG Frequently Asked Questions (FAQ)
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Infineon recommends a symmetrical layout with a thermal pad connected to a large copper area on the PCB to ensure good heat dissipation. A minimum of 2 oz copper thickness is recommended.
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The gate resistor value depends on the driver circuit, PCB layout, and switching frequency. A general guideline is to use a value between 10 Ω to 100 Ω. However, it's recommended to consult Infineon's application notes and perform simulations to determine the optimal value for your specific design.
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Although the datasheet specifies a maximum VGS of ±20 V, it's recommended to limit the voltage to ±15 V during switching to ensure reliable operation and prevent damage to the device.
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To prevent unwanted turn-on or turn-off, ensure that the gate-source voltage (VGS) is properly biased during startup and shutdown. This can be achieved by using a voltage regulator or a voltage clamp circuit to limit the voltage swing.
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Although the datasheet specifies an operating temperature range of -55°C to 175°C, it's recommended to operate the device within a range of -40°C to 150°C for optimal performance and reliability.