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Part Details for BSC12DN20NS3GATMA1 by Infineon Technologies AG
Results Overview of BSC12DN20NS3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC12DN20NS3GATMA1 Information
BSC12DN20NS3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC12DN20NS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y1813
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Newark | Mosfet Transistor, n Channel,11.3 A,200 V,0.108 Ohm,10 V,3 V Rohs Compliant: Yes |Infineon BSC12DN20NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1372 |
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$0.4580 / $1.4700 | Buy Now |
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DISTI #
BSC12DN20NS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 200V 11.3A 8TDSON Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
6583 In Stock |
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$0.4688 / $1.8400 | Buy Now |
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DISTI #
BSC12DN20NS3GATMA1
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Avnet Americas | - Tape and Reel (Alt: BSC12DN20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 5000 |
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$0.4385 / $0.4593 | Buy Now |
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DISTI #
50Y1813
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Avnet Americas | Power MOSFET, N Channel, 200 V, 11.3 A, 125 mOhm, TDSON, 8 Pins, Surface Mount - Tape and Reel (Alt: 50Y1813) Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Reel | 262 Partner Stock |
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$0.7950 / $1.2500 | Buy Now |
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DISTI #
V72:2272_06384558
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Arrow Electronics | Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2315 Container: Cut Strips | Americas - 16 |
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$0.4809 / $0.8542 | Buy Now |
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Future Electronics | Single N-Channel 200 V 125 mOhm 6.5 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Container: Reel | 5000Reel |
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$0.5100 | Buy Now |
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Future Electronics | Single N-Channel 200 V 125 mOhm 6.5 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.4750 | Buy Now |
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DISTI #
69264362
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Verical | Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R Min Qty: 47 Package Multiple: 1 Date Code: 2315 | Americas - 12800 |
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$0.5520 / $0.5860 | Buy Now |
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DISTI #
87044714
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Verical | Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R Min Qty: 473 Package Multiple: 1 | Americas - 8747 |
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$0.7940 | Buy Now |
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DISTI #
87249941
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Verical | Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R Min Qty: 473 Package Multiple: 1 Date Code: 2301 | Americas - 5076 |
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$0.7940 | Buy Now |
Part Details for BSC12DN20NS3GATMA1
BSC12DN20NS3GATMA1 CAD Models
BSC12DN20NS3GATMA1 Part Data Attributes
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BSC12DN20NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC12DN20NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 11.3 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC12DN20NS3GATMA1
This table gives cross-reference parts and alternative options found for BSC12DN20NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC12DN20NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSZ12DN20NS3GATMA1 | Infineon Technologies AG | $0.6981 | Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSC12DN20NS3GATMA1 vs BSZ12DN20NS3GATMA1 |
| BSC12DN20NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC12DN20NS3GATMA1 vs BSC12DN20NS3G |
BSC12DN20NS3GATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSC12DN20NS3GATMA1 is -40°C to 150°C.
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To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet, and ensure that the device is operated within the recommended operating conditions.
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For optimal thermal performance, it is recommended to use a multi-layer PCB with a thermal via structure, and to ensure good thermal conductivity between the device and the heat sink or PCB.
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To prevent ESD damage, handle the device with ESD-protective equipment, and ensure that the device is properly grounded during handling and assembly.
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The recommended soldering conditions for the BSC12DN20NS3GATMA1 are a peak temperature of 260°C, with a soldering time of 10-30 seconds.