Part Details for BSC123N08NS3GXT by Infineon Technologies AG
Results Overview of BSC123N08NS3GXT by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
BSC123N08NS3GXT Information
BSC123N08NS3GXT by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC123N08NS3GXT
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 24518 |
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RFQ |
Part Details for BSC123N08NS3GXT
BSC123N08NS3GXT CAD Models
BSC123N08NS3GXT Part Data Attributes
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BSC123N08NS3GXT
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC123N08NS3GXT
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Avalanche Energy Rating (Eas) | 70 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.0123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 66 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC123N08NS3GXT
This table gives cross-reference parts and alternative options found for BSC123N08NS3GXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC123N08NS3GXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSZ123N08NS3GATMA1 | Infineon Technologies AG | $0.5508 | Power Field-Effect Transistor, 10A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSC123N08NS3GXT vs BSZ123N08NS3GATMA1 |
| BSC123N08NS3GATMA1 | Infineon Technologies AG | $0.8535 | Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC123N08NS3GXT vs BSC123N08NS3GATMA1 |
| BSC123N08NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC123N08NS3GXT vs BSC123N08NS3G |
| BSZ123N08NS3GXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSC123N08NS3GXT vs BSZ123N08NS3GXT |
BSC123N08NS3GXT Frequently Asked Questions (FAQ)
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The BSC123N08NS3GXT has an operating temperature range of -40°C to 150°C.
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To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet, and use a suitable gate driver circuit to minimize switching losses.
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The device has a thermal resistance of 1.5°C/W. Ensure proper heat sinking and thermal management to prevent overheating, especially in high-power applications.
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Yes, the BSC123N08NS3GXT is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications.
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Follow proper ESD handling procedures, use ESD-protective packaging, and ensure the device is properly grounded during handling and assembly.