Datasheets
BSC120N03MSG by:

Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC120N03MSG by Infineon Technologies AG

Results Overview of BSC120N03MSG by Infineon Technologies AG

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BSC120N03MSG Information

BSC120N03MSG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC120N03MSG

Part # Distributor Description Stock Price Buy
Bristol Electronics   10
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1132
  • 1 $0.7875
  • 128 $0.3938
  • 509 $0.3150
$0.3150 / $0.7875 Buy Now
DISTI # SMC-BSC120N03MSG
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 3673
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 90
  • 1 $3.8500
  • 100 $2.8800
  • 1,000 $2.5000
$2.5000 / $3.8500 Buy Now

Part Details for BSC120N03MSG

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BSC120N03MSG Part Data Attributes

BSC120N03MSG Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC120N03MSG Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 28 W
Pulsed Drain Current-Max (IDM) 156 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC120N03MSG

This table gives cross-reference parts and alternative options found for BSC120N03MSG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC120N03MSG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC120N03MSGATMA1 Infineon Technologies AG $0.3782 Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC120N03MSG vs BSC120N03MSGATMA1
Part Number Manufacturer Composite Price Description Compare
BSC050N03MSGATMA1 Infineon Technologies AG $0.3355 Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC120N03MSG vs BSC050N03MSGATMA1
BSC037N03LSCG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 21A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC120N03MSG vs BSC037N03LSCG
BSC889N03MSG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC120N03MSG vs BSC889N03MSG
BSC100N03MSG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC120N03MSG vs BSC100N03MSG
BSC883N03MSG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC120N03MSG vs BSC883N03MSG
BSC050NE2LS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 60A I(D), 25V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC120N03MSG vs BSC050NE2LS
BSC049N03MSCG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC120N03MSG vs BSC049N03MSCG
BSC050N03MSG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC120N03MSG vs BSC050N03MSG
FDMS8670AS Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN BSC120N03MSG vs FDMS8670AS
FDMS7692A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 13.5A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN BSC120N03MSG vs FDMS7692A

BSC120N03MSG Related Parts

BSC120N03MSG Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the BSC120N03MSG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, voltage, and current ratings. It's recommended to consult with Infineon's application notes or contact their technical support for more information.

  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink or PCB. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is properly mounted and secured. The datasheet provides thermal resistance values (RthJA and RthJC) that can be used to estimate the device's junction temperature. Additionally, consider using a heat sink with a high thermal conductivity and a sufficient surface area to dissipate heat effectively.

  • The recommended gate drive voltage for the BSC120N03MSG is typically between 10V to 15V, with a current capability of up to 1A to 2A, depending on the specific application requirements. However, it's essential to consult the datasheet and application notes for more detailed information on gate drive requirements, as excessive gate voltage or current can damage the device.

  • To protect the BSC120N03MSG from electrostatic discharge (ESD), it's essential to handle the device with care during assembly and storage. Use ESD-safe materials, such as wrist straps, mats, and bags, and ensure that all equipment and tools are properly grounded. Additionally, consider implementing ESD protection circuits or devices in the application circuit to prevent ESD events from damaging the device.

  • For optimal performance and reliability, it's essential to follow good PCB layout and design practices when using the BSC120N03MSG. Keep the power traces short and wide, use a solid ground plane, and ensure proper decoupling and bypassing. Additionally, consider the device's thermal pad and ensure it's properly connected to the heat sink or PCB. Consult the datasheet and application notes for more detailed information on PCB design considerations.

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