Part Details for BSC120N03LSG by Infineon Technologies AG
Results Overview of BSC120N03LSG by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC120N03LSG Information
BSC120N03LSG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC120N03LSG
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 9 | 50 |
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$0.3656 / $0.5625 | Buy Now |
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Quest Components | 12 A, 30 V, 0.012 OHM, N-CHANNEL, SI, POWER, MOSFET | 40 |
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$0.3750 / $0.7500 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 60 |
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$0.5000 / $0.7700 | Buy Now |
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DISTI #
SP000275118
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EBV Elektronik | Trans MOSFET NCH 30V 12A 8Pin TDSON TR (Alt: SP000275118) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 30V 39A 12m10V30A 28W 2.2V 1 N-channel TDSON-8 MOSFETs ROHS | 3 |
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$0.9716 / $1.6038 | Buy Now |
Part Details for BSC120N03LSG
BSC120N03LSG CAD Models
BSC120N03LSG Part Data Attributes
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BSC120N03LSG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC120N03LSG
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 10 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 156 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC120N03LSG
This table gives cross-reference parts and alternative options found for BSC120N03LSG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC120N03LSG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| CSD17579Q5A | Texas Instruments | $0.3067 | 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP | BSC120N03LSG vs CSD17579Q5A |
| CSD17579Q5AT | Texas Instruments | $0.3646 | 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP -55 to 150 | BSC120N03LSG vs CSD17579Q5AT |
| BSC090N03LSGATMA1 | Infineon Technologies AG | $0.4053 | Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03LSG vs BSC090N03LSGATMA1 |
| STSJ50NH3LL | STMicroelectronics | Check for Price | 12A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWER, SOP-8 | BSC120N03LSG vs STSJ50NH3LL |
| BSC119N03SG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11.9A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03LSG vs BSC119N03SG |
BSC120N03LSG Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSC120N03LSG is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
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To ensure proper biasing, make sure to follow the recommended voltage and current ratings specified in the datasheet. The device requires a gate-source voltage (VGS) of 0 to 10V, and a drain-source voltage (VDS) of 0 to 30V. Additionally, ensure that the device is operated within the recommended current ratings to prevent overheating and damage.
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For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity and heat dissipation. This can be achieved by using a thick copper layer, thermal vias, and a heat sink. Additionally, ensure that the device is mounted on a thermally conductive material, such as a metal core PCB or a heat sink, to dissipate heat efficiently.
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To protect the BSC120N03LSG from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an ESD-protected package. Additionally, ensure that the device is properly grounded during assembly and testing to prevent ESD damage.
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The recommended gate drive circuits for the BSC120N03LSG include a gate driver IC, such as the Infineon 1EDN or 2EDN series, or a discrete gate driver circuit using a BJT or MOSFET. The gate drive circuit should be designed to provide a fast rise and fall time, and a high current capability to ensure proper switching of the device.