Part Details for BSC119N03MSCG by Infineon Technologies AG
Results Overview of BSC119N03MSCG by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSC119N03MSCG Information
BSC119N03MSCG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC119N03MSCG
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 159625 |
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RFQ |
Part Details for BSC119N03MSCG
BSC119N03MSCG CAD Models
BSC119N03MSCG Part Data Attributes
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BSC119N03MSCG
Infineon Technologies AG
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Datasheet
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BSC119N03MSCG
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 10 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.0119 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 156 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
BSC119N03MSCG Frequently Asked Questions (FAQ)
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Infineon provides a dedicated application note (AN2014-01) that outlines the recommended PCB layout and thermal design guidelines for the BSC119N03MSCG. It's essential to follow these guidelines to ensure optimal performance, thermal management, and reliability.
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When selecting a gate driver for the BSC119N03MSCG, consider the driver's output current capability, voltage rating, and rise/fall times. Infineon recommends using a gate driver with a output current of at least 2A and a voltage rating that matches the MOSFET's gate-source voltage. The 1EDC and 2EDC families from Infineon are suitable options.
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The BSC119N03MSCG's SOA is not explicitly stated in the datasheet. However, Infineon provides a dedicated SOA application note (AN2015-05) that outlines the SOA limitations for this device. It's essential to understand these limitations to ensure the device operates within a safe region and to prevent damage or premature failure.
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The BSC119N03MSCG's body diode can be a concern during switching transitions. To minimize the impact, use a gate driver with a dedicated diode emulation feature or add an external diode in parallel with the MOSFET. This helps to reduce the diode's recovery time and prevent unwanted voltage spikes.
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Infineon provides a dedicated soldering and assembly guide (AN2013-03) that outlines the recommended procedures for the BSC119N03MSCG. It's essential to follow these guidelines to ensure reliable connections, prevent damage, and maintain the device's performance.