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Part Details for BSC090N03LSGATMA1 by Infineon Technologies AG
Results Overview of BSC090N03LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
BSC090N03LSGATMA1 Information
BSC090N03LSGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC090N03LSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60R2505
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Newark | Mosfet, N Ch, 48A, 30V, Pg-Tdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:48A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0075Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:-, Power Rohs Compliant: Yes |Infineon BSC090N03LSGATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2079 |
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$0.3020 / $0.3310 | Buy Now |
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DISTI #
BSC090N03LSGATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 13A/48A TDSON Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.1895 / $0.3000 | Buy Now |
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DISTI #
BSC090N03LSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC090N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.1589 / $0.1622 | Buy Now |
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DISTI #
726-BSC090N03LSGATMA
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Mouser Electronics | MOSFETs N-Ch 30V 47A TDSON-8 OptiMOS 3 RoHS: Compliant | 3286 |
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$0.2060 / $0.7100 | Buy Now |
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DISTI #
E02:0323_00171378
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Arrow Electronics | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 14 Weeks | Europe - 5000 |
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$0.1730 | Buy Now |
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DISTI #
V72:2272_06390968
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Arrow Electronics | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2251 Container: Cut Strips | Americas - 968 |
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$0.1703 / $0.2216 | Buy Now |
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DISTI #
87907213
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R Min Qty: 1166 Package Multiple: 1 Date Code: 2201 | Americas - 16280 |
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$0.3218 | Buy Now |
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DISTI #
86920798
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2442 | Americas - 5000 |
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$0.2184 | Buy Now |
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DISTI #
19124375
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R Min Qty: 5000 Package Multiple: 5000 | Americas - 5000 |
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$0.1724 | Buy Now |
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DISTI #
71239271
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R Min Qty: 124 Package Multiple: 1 Date Code: 2301 | Americas - 4995 |
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$0.2060 / $0.2340 | Buy Now |
Part Details for BSC090N03LSGATMA1
BSC090N03LSGATMA1 CAD Models
BSC090N03LSGATMA1 Part Data Attributes
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BSC090N03LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC090N03LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 10 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.0133 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 192 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC090N03LSGATMA1
This table gives cross-reference parts and alternative options found for BSC090N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC090N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD17579Q5A | Texas Instruments | $0.3067 | 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP | BSC090N03LSGATMA1 vs CSD17579Q5A |
| CSD17579Q5AT | Texas Instruments | $0.3646 | 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP -55 to 150 | BSC090N03LSGATMA1 vs CSD17579Q5AT |
| STSJ50NH3LL | STMicroelectronics | Check for Price | 12A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWER, SOP-8 | BSC090N03LSGATMA1 vs STSJ50NH3LL |
| BSC120N03LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC090N03LSGATMA1 vs BSC120N03LSG |
| BSC119N03SG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11.9A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC090N03LSGATMA1 vs BSC119N03SG |
BSC090N03LSGATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSC090N03LSGATMA1 is -40°C to 150°C.
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To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, ensure that the device is properly decoupled and that the PCB layout is optimized for minimal parasitic inductance and capacitance.
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To minimize parasitic inductance and capacitance, use a multi-layer PCB with a solid ground plane, and keep the device as close to the power source as possible. Also, use short and wide traces for the power connections, and avoid using vias under the device.
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To ensure proper thermal management, use a heat sink with a thermal interface material (TIM) and ensure good airflow around the device. The recommended thermal resistance (RthJA) for this device is 40 K/W.
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The BSC090N03LSGATMA1 has an integrated ESD protection diode, but it is still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage to the device.