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Part Details for BSC0904NSI by Infineon Technologies AG
Results Overview of BSC0904NSI by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC0904NSI Information
BSC0904NSI by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC0904NSI
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-BSC0904NSI
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Mouser Electronics | MOSFETs N-Ch 30V 78A TDSON-8 OptiMOS RoHS: Compliant | 12273 |
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$0.2460 / $1.0100 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 290 |
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$0.5000 / $0.7700 | Buy Now |
Part Details for BSC0904NSI
BSC0904NSI CAD Models
BSC0904NSI Part Data Attributes
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BSC0904NSI
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC0904NSI
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 14 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 37 W | |
| Pulsed Drain Current-Max (IDM) | 312 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
BSC0904NSI Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
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Use a shielded cable and connector, and ensure the PCB layout is designed to minimize electromagnetic radiation. Additionally, use a common-mode choke and ferrite beads to filter out electromagnetic interference.
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The maximum allowed voltage on the input pins is 40V, but it's recommended to keep it below 30V to ensure reliable operation and prevent damage to the device.
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Use a logic analyzer or oscilloscope to monitor the input and output signals. Check the power supply voltage, input signal integrity, and output load conditions. Consult the datasheet and application notes for troubleshooting guidelines.
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The BSC0904NSI is rated for operation up to 150°C. However, the device's performance and reliability may degrade at high temperatures. Ensure proper heat sinking and thermal management to maintain a safe operating temperature.