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Part Details for BSC080P03LSGAUMA1 by Infineon Technologies AG
Results Overview of BSC080P03LSGAUMA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
BSC080P03LSGAUMA1 Information
BSC080P03LSGAUMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC080P03LSGAUMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSC080P03LSGAUMA1CT-ND
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DigiKey | MOSFET P-CH 30V 16A/30A TDSON-8 Min Qty: 5000 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5000 In Stock |
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$0.9919 | Buy Now |
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DISTI #
BSC080P03LSGAUMA1
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Avnet Americas | Trans MOSFET P-CH 30V 16A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC080P03LSGAUMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.7572 / $0.8100 | Buy Now |
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DISTI #
86307656
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Verical | Trans MOSFET P-CH 30V 16A 8-Pin TDSON EP T/R Min Qty: 224 Package Multiple: 1 Date Code: 2301 | Americas - 22747 |
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$1.0415 / $1.6750 | Buy Now |
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DISTI #
78062135
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Verical | Trans MOSFET P-CH 30V 16A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2337 | Americas - 5000 |
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$0.4938 | Buy Now |
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DISTI #
86307657
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Verical | Trans MOSFET P-CH 30V 16A 8-Pin TDSON EP T/R Min Qty: 224 Package Multiple: 1 Date Code: 2201 | Americas - 3535 |
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$1.0415 / $1.6750 | Buy Now |
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Rochester Electronics | P-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 26282 |
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$0.8332 / $1.3400 | Buy Now |
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Win Source Electronics | MOSFET P-CH 30V 16A/30A TDSON-8 | 53940 |
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$1.0882 / $1.6324 | Buy Now |
Part Details for BSC080P03LSGAUMA1
BSC080P03LSGAUMA1 CAD Models
BSC080P03LSGAUMA1 Part Data Attributes
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BSC080P03LSGAUMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC080P03LSGAUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 248 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC080P03LSGAUMA1
This table gives cross-reference parts and alternative options found for BSC080P03LSGAUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC080P03LSGAUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC084P03NS3GATMA1 | Infineon Technologies AG | $0.2220 | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC080P03LSGAUMA1 vs BSC084P03NS3GATMA1 |
| BSC084P03NS3EG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC080P03LSGAUMA1 vs BSC084P03NS3EG |
| BSC080P03LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC080P03LSGAUMA1 vs BSC080P03LSG |
| BSC084P03NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC080P03LSGAUMA1 vs BSC084P03NS3G |
BSC080P03LSGAUMA1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal pad design, copper thickness, and via placement to ensure optimal thermal performance.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
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Infineon recommends following the soldering conditions outlined in their application note AN2013-02, which includes guidelines for reflow soldering, wave soldering, and hand soldering to ensure reliable assembly and minimize the risk of damage.
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To troubleshoot overcurrent protection issues, check the device's current sense resistor value, ensure proper PCB layout and routing, and verify that the device is not overheating. Also, consult the datasheet for specific guidance on overcurrent protection and fault detection.
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Operating the device at the maximum junction temperature can reduce its lifespan and affect its reliability. It's essential to ensure proper thermal design and cooling to maintain a safe operating temperature and prevent premature aging.