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Part Details for BSC070N10NS3GATMA1 by Infineon Technologies AG
Results Overview of BSC070N10NS3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC070N10NS3GATMA1 Information
BSC070N10NS3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC070N10NS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2443421RL
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Farnell | MOSFET, N CH, 100V, 90A, TDSON-8 RoHS: Compliant Min Qty: 100 Lead time: 17 Weeks, 1 Days Container: Reel | 14299 |
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$0.6407 / $0.9397 | Buy Now |
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DISTI #
2443421
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Farnell | MOSFET, N CH, 100V, 90A, TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Cut Tape | 14299 |
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$0.6407 / $1.7280 | Buy Now |
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DISTI #
BSC070N10NS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 90A TDSON-8 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
29400 In Stock |
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$0.6037 / $2.0900 | Buy Now |
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DISTI #
BSC070N10NS3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 100 V, 90 A, 0.0063 ohm, TDSON, Surface Mount - Tape and Reel (Alt: BSC070N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4658 / $0.4963 | Buy Now |
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DISTI #
726-BSC070N10NS3GATM
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Mouser Electronics | MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 3 RoHS: Compliant | 11627 |
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$0.6420 / $1.8300 | Buy Now |
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DISTI #
E02:0323_02823315
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Arrow Electronics | Trans MOSFET N-CH 100V 92A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks | Europe - 10000 |
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$0.6818 | Buy Now |
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DISTI #
E32:1076_02823315
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Arrow Electronics | Trans MOSFET N-CH 100V 92A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2403 | Europe - 3332 |
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$0.5429 / $1.2004 | Buy Now |
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Future Electronics | N-Channel 100 V 7 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Container: Reel | 20000Reel |
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$0.4650 | Buy Now |
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Future Electronics | N-Channel 100 V 7 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.4650 | Buy Now |
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DISTI #
88175080
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Verical | Trans MOSFET N-CH 100V 92A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2306 | Americas - 410000 |
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$0.6122 | Buy Now |
Part Details for BSC070N10NS3GATMA1
BSC070N10NS3GATMA1 CAD Models
BSC070N10NS3GATMA1 Part Data Attributes
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BSC070N10NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC070N10NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC070N10NS3GATMA1
This table gives cross-reference parts and alternative options found for BSC070N10NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC070N10NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC070N10NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC070N10NS3GATMA1 vs BSC070N10NS3G |
BSC070N10NS3GATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the BSC070N10NS3GATMA1 is 175°C, as specified in the datasheet.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
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The maximum current rating of the BSC070N10NS3GATMA1 is 70A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
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To protect the BSC070N10NS3GATMA1 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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The recommended gate drive voltage for the BSC070N10NS3GATMA1 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can reduce the device's on-state resistance, but may also increase the risk of gate oxide damage.