Part Details for BSC067N06LS3G by Infineon Technologies AG
Results Overview of BSC067N06LS3G by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
BSC067N06LS3G Information
BSC067N06LS3G by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC067N06LS3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 2 |
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RFQ | ||
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LCSC | 60V 50A 6.7m10V50A 69W 2.2V 1 N-channel TDSON-8-EP(5x6) MOSFETs ROHS | 3186 |
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$0.3289 / $0.6563 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH 60V 15A Automotive 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor | 32459 |
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$0.4546 / $0.6819 | Buy Now |
Part Details for BSC067N06LS3G
BSC067N06LS3G CAD Models
BSC067N06LS3G Part Data Attributes
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BSC067N06LS3G
Infineon Technologies AG
Buy Now
Datasheet
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BSC067N06LS3G
Infineon Technologies AG
Power Field-Effect Transistor, 15A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 47 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.0067 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC067N06LS3G
This table gives cross-reference parts and alternative options found for BSC067N06LS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC067N06LS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC067N06LS3GATMA1 | Infineon Technologies AG | $0.9400 | Power Field-Effect Transistor, 15A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC067N06LS3G vs BSC067N06LS3GATMA1 |
Resources and Additional Insights for BSC067N06LS3G
Reference Designs related to BSC067N06LS3G
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15W Reference design for flyback Smart Phone/Tablet (5V/3A)
15W 5.0V high efficiency USB adapter reference design board using Infineon Quasi-Resonant PWM IC ICE2QS03G with CoolMOS™ IPS65R1K5CE (IPAK) and secondary side synchronous rectification IC with OptiMOS™ BSC067N06LS3 G (ThinPAK) in a small form factor, high efficiency and various mode of protections for a high reliable system.
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10W 5V Mini USB Adapter Reference Board
This is a 10.5W 5.0V USB adapter reference design using Infineon Quasiresonant PWM IC ICE2QS03G and CoolMOS™ IPU60R950C6 (IPAK) in a small form factor with various mode of protections for a high reliable system.
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15W 5V Slim Adapter Reference Board
This is a 15W 5.0V/3.0A USB adapter reference design using Quasiresonant PWM IC ICE2QS03G, CoolMOS™ IPU60R950C6 (IPAK), OptiMOS™ BSC067N06LS3G and high Speed Switching Diode BAS21-03W in a slim plug form factor with various mode of protections.
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15W Reference design for flyback Smart Phone/Tablet (5V/3A)
15W 5.0V high efficiency USB adapter reference design board using Infineon Quasi-Resonant PWM IC ICE2QS03G with CoolMOS™ IPS65R1K0CE (IPAK) and secondary side synchronous rectification IC with OptiMOS™ BSC067N06LS3 G (ThinPAK) in a small form factor, high efficiency and various mode of protections for a high reliable system.
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5W Adapter Reference Design
This is a 15W 5.0V / 3.0A USB adapter reference design using Infineon Quasi-Resonant PWM IC ICE2QS03G, CoolMOS™ IPL65R1K5C6S (ThinPAK 5x6), OptiMOS™ BSC067N06LS3G and high Speed Switching Diode BAS21-03W in a slim plug form factor with various mode of protections for a high reliable system.
BSC067N06LS3G Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSC067N06LS3G is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
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The maximum current rating for the BSC067N06LS3G is 67A, but it's essential to consider the device's thermal limitations and ensure proper cooling to prevent overheating.
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To protect the BSC067N06LS3G from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the workspace is ESD-safe.
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The recommended gate resistor value for the BSC067N06LS3G is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency.