Part Details for BSC057N08NS3G by Infineon Technologies AG
Results Overview of BSC057N08NS3G by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
BSC057N08NS3G Information
BSC057N08NS3G by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC057N08NS3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | MOSFET OPTIMOS 3 POWER-TRANISTOR, 80 V Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 35070 |
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RFQ | |
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LCSC | 80V 100A 114W 5.7m10V50A 3.5V 1 N-channel TDSON-8-EP(5x6) MOSFETs ROHS | 3091 |
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$0.4300 / $0.6020 | Buy Now |
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Vyrian | Transistors | 11748 |
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RFQ | |
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Win Source Electronics | OptiMOS3 Power-Transistor | 27540 |
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$0.5100 / $0.6588 | Buy Now |
Part Details for BSC057N08NS3G
BSC057N08NS3G CAD Models
BSC057N08NS3G Part Data Attributes
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BSC057N08NS3G
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC057N08NS3G
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 216 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.0057 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 114 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC057N08NS3G
This table gives cross-reference parts and alternative options found for BSC057N08NS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC057N08NS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC057N08NS3GATMA1 | Infineon Technologies AG | $1.2904 | Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC057N08NS3G vs BSC057N08NS3GATMA1 |
BSC057N08NS3G Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSC057N08NS3G is -40°C to 150°C.
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The recommended PCB layout for the BSC057N08NS3G involves using a multi-layer PCB with a solid ground plane, placing the device close to the power source, and using short and wide traces to minimize inductance and radiation.
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To ensure proper cooling, the BSC057N08NS3G should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the system should be designed to provide adequate airflow to dissipate heat.
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The recommended gate drive circuit for the BSC057N08NS3G involves using a dedicated gate driver IC with a high current capability and a low output impedance to ensure fast switching times and minimal ringing.
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To protect the BSC057N08NS3G from overvoltage and overcurrent conditions, a voltage clamp or a transient voltage suppressor (TVS) can be used to limit the voltage, and a current sense resistor or a fuse can be used to detect and respond to overcurrent conditions.