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Part Details for BSC052N03LSATMA1 by Infineon Technologies AG
Results Overview of BSC052N03LSATMA1 by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC052N03LSATMA1 Information
BSC052N03LSATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC052N03LSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2443370
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Farnell | MOSFET, N CH, 30V, 57A, TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Cut Tape | 4907 |
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$0.3045 / $1.1235 | Buy Now |
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DISTI #
2443370RL
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Farnell | MOSFET, N CH, 30V, 57A, TDSON-8 RoHS: Compliant Min Qty: 100 Lead time: 19 Weeks, 1 Days Container: Reel | 4907 |
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$0.3045 / $0.5199 | Buy Now |
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DISTI #
BSC052N03LSATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 17A/57A TDSON Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
21746 In Stock |
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$0.2610 / $1.2100 | Buy Now |
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DISTI #
BSC052N03LSATMA1
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Avnet Americas | Power MOSFET, N Channel, 30 V, 57 A, 0.0043 ohm, TDSON, Surface Mount - Tape and Reel (Alt: BSC052N03LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 5000 |
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$0.2131 / $0.2176 | Buy Now |
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DISTI #
E02:0323_02823314
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Arrow Electronics | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Date Code: 2308 | Europe - 5000 |
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$0.2822 | Buy Now |
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DISTI #
V72:2272_06384763
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Arrow Electronics | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2212 Container: Cut Strips | Americas - 1413 |
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$0.2498 / $0.5021 | Buy Now |
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Future Electronics | Single N-Channel 30 V 5.2 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 5000Reel |
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$0.2400 / $0.2450 | Buy Now |
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Future Electronics | Single N-Channel 30 V 5.2 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.2400 / $0.2450 | Buy Now |
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DISTI #
73553807
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Verical | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2304 | Americas - 405000 |
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$0.2801 | Buy Now |
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DISTI #
85954513
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Verical | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R Min Qty: 847 Package Multiple: 1 Date Code: 2201 | Americas - 73000 |
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$0.4431 | Buy Now |
Part Details for BSC052N03LSATMA1
BSC052N03LSATMA1 CAD Models
BSC052N03LSATMA1 Part Data Attributes
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BSC052N03LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC052N03LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 12 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.0072 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 228 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
BSC052N03LSATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSC052N03LSATMA1 is -55°C to 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 4.5V and 10V, and the drain-source voltage (Vds) should be within the specified range of 30V.
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A good PCB layout should include a solid ground plane, short and wide traces, and a thermal pad for heat dissipation. Thermal management can be achieved through the use of a heat sink or thermal interface material.
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To protect the MOSFET from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
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The maximum current rating for the BSC052N03LSATMA1 is 52A, but this can be affected by the operating temperature and PCB design.