Part Details for BSC040N08NS5 by Infineon Technologies AG
Results Overview of BSC040N08NS5 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC040N08NS5 Information
BSC040N08NS5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC040N08NS5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82095900
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Verical | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2325 | Americas - 800000 |
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$0.7700 | Buy Now |
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DISTI #
87726185
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Verical | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R Min Qty: 37 Package Multiple: 1 Date Code: 2501 | Americas - 5000 |
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$1.7145 / $2.0919 | Buy Now |
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Bristol Electronics | 2039 |
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RFQ | ||
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Cytech Systems Limited | 5000 |
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RFQ | ||
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LCSC | 80V 121A 104W 4m10V50A 3.8V 1 N-channel TDSON-8 MOSFETs ROHS | 8 |
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$1.3730 / $2.3400 | Buy Now |
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Win Source Electronics | Superior thermal resistance | 51720 |
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$0.7701 / $0.9946 | Buy Now |
Part Details for BSC040N08NS5
BSC040N08NS5 CAD Models
BSC040N08NS5 Part Data Attributes
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BSC040N08NS5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC040N08NS5
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC040N08NS5
This table gives cross-reference parts and alternative options found for BSC040N08NS5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC040N08NS5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC036NE7NS3GATMA1 | Infineon Technologies AG | $1.7034 | Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | BSC040N08NS5 vs BSC036NE7NS3GATMA1 |
| BSC042NE7NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC040N08NS5 vs BSC042NE7NS3G |
| BSC036NE7NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | BSC040N08NS5 vs BSC036NE7NS3G |
| BSB044N08NN3GXUMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 80V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | BSC040N08NS5 vs BSB044N08NN3GXUMA1 |
BSC040N08NS5 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the BSC040N08NS5 is 175°C, as specified in the datasheet.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
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The maximum current rating of the BSC040N08NS5 is 40A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
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To protect the BSC040N08NS5 from overvoltage, a transient voltage suppressor (TVS) or a zener diode can be used to clamp the voltage to a safe level. Additionally, a voltage regulator can be used to regulate the input voltage to the device.
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The recommended gate resistor value for the BSC040N08NS5 is between 10Ω and 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).