Datasheets
BSC034N03LSGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC034N03LSGATMA1 by Infineon Technologies AG

Results Overview of BSC034N03LSGATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

BSC034N03LSGATMA1 Information

BSC034N03LSGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC034N03LSGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 448-BSC034N03LSGATMA1CT-ND
DigiKey MOSFET N-CH 30V 22A/100A TDSON Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4984
In Stock
  • 1 $1.2200
  • 10 $0.4570
  • 100 $0.3743
  • 500 $0.3617
  • 1,000 $0.3562
  • 2,000 $0.3534
  • 5,000 $0.3359
  • 10,000 $0.3226
$0.3226 / $1.2200 Buy Now
DISTI # BSC034N03LSGATMA1
Avnet Americas - Tape and Reel (Alt: BSC034N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 111 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.2703
  • 10,000 $0.2689
  • 20,000 $0.2675
  • 30,000 $0.2661
  • 40,000 $0.2648
$0.2648 / $0.2703 Buy Now
DISTI # 726-BSC034N03LSGATMA
Mouser Electronics MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant 9537
  • 1 $1.0700
  • 10 $0.4290
  • 25 $0.4260
  • 100 $0.3560
  • 250 $0.3540
  • 500 $0.3360
  • 5,000 $0.3350
$0.3350 / $1.0700 Buy Now
DISTI # V72:2272_06384624
Arrow Electronics Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Container: Cut Strips Americas - 300
  • 1 $0.2992
  • 10 $0.2945
  • 25 $0.2898
  • 100 $0.2851
  • 250 $0.2805
  • 500 $0.2758
$0.2758 / $0.2992 Buy Now
DISTI # 87660832
Verical Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2504 Americas - 5000
  • 5,000 $0.3500
$0.3500 Buy Now
DISTI # 88924668
Verical Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R Min Qty: 22 Package Multiple: 1 Americas - 300
  • 22 $0.2992
$0.2992 Buy Now
DISTI # BSC034N03LSGATMA1
TME Transistor: N-MOSFET, unipolar, 30V, 100A, 57W, PG-TDSON-8 Min Qty: 1 0
  • 1 $1.0670
  • 10 $0.7180
  • 20 $0.5850
  • 100 $0.4920
  • 200 $0.4720
  • 250 $0.4620
  • 500 $0.4000
  • 1,000 $0.3900
$0.3900 / $1.0670 RFQ
DISTI # SP000475948
EBV Elektronik Trans MOSFET NCH 30V 100A 8Pin TDSON TR (Alt: SP000475948) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 15 Weeks, 0 Days EBV - 5000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 5000
  • 5,000 $0.5400
$0.5400 Buy Now
Vyrian Transistors 7131
RFQ

Part Details for BSC034N03LSGATMA1

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BSC034N03LSGATMA1 Part Data Attributes

BSC034N03LSGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC034N03LSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 55 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.0051 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC034N03LSGATMA1

This table gives cross-reference parts and alternative options found for BSC034N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC034N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC034N03LSGXT Infineon Technologies AG Check for Price Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC034N03LSGATMA1 vs BSC034N03LSGXT
CSD17506Q5A Texas Instruments Check for Price 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4 mOhm 8-VSONP -55 to 150 BSC034N03LSGATMA1 vs CSD17506Q5A

BSC034N03LSGATMA1 Related Parts

BSC034N03LSGATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSC034N03LSGATMA1 is -40°C to 150°C.

  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet, and ensure the device is operated within the recommended operating conditions.

  • For optimal thermal performance, use a multi-layer PCB with a thermal via structure, and ensure good thermal conductivity between the device and the heat sink. Refer to the application note for specific layout recommendations.

  • Handle the device with ESD-protective equipment, and ensure the device is stored in an ESD-protected environment. Follow proper ESD handling procedures during assembly and testing.

  • Follow the recommended soldering temperature profile specified in the datasheet, and ensure the device is not exposed to excessive temperatures or thermal shocks during the soldering process.

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