Part Details for BSC020N03LSG by Infineon Technologies AG
Results Overview of BSC020N03LSG by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC020N03LSG Information
BSC020N03LSG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC020N03LSG
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 100 A, 30 V, 0.0029 OHM, N-CHANNEL, SI, POWER, MOSFET | 85 |
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$0.6731 / $1.4424 | Buy Now |
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Quest Components | 100 A, 30 V, 0.0029 OHM, N-CHANNEL, SI, POWER, MOSFET | 39 |
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$1.5000 / $2.5000 | Buy Now |
Part Details for BSC020N03LSG
BSC020N03LSG CAD Models
BSC020N03LSG Part Data Attributes
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BSC020N03LSG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC020N03LSG
Infineon Technologies AG
Power Field-Effect Transistor, 28A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.0029 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 96 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC020N03LSG
This table gives cross-reference parts and alternative options found for BSC020N03LSG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC020N03LSG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC052N03SG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC020N03LSG vs BSC052N03SG |
| BSC027N03SG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 25A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC020N03LSG vs BSC027N03SG |
| FDS7088N3 | Rochester Electronics LLC | Check for Price | 21A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 | BSC020N03LSG vs FDS7088N3 |
| HAT2099H | Renesas Electronics Corporation | Check for Price | 50A, 30V, 0.0073ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 | BSC020N03LSG vs HAT2099H |
| BSC079N03SG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14.6A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC020N03LSG vs BSC079N03SG |
| BSC0908NSATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 34V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC020N03LSG vs BSC0908NSATMA1 |
| BSC059N03SG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC020N03LSG vs BSC059N03SG |
| FDS7066N7 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 23A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | BSC020N03LSG vs FDS7066N7 |
| FDS7088N7 | Rochester Electronics LLC | Check for Price | 23A, 30V, 0.003ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 | BSC020N03LSG vs FDS7088N7 |
| BSC016N03LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC020N03LSG vs BSC016N03LSG |
BSC020N03LSG Frequently Asked Questions (FAQ)
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Infineon provides a dedicated application note (AN2014-03) that outlines the recommended PCB layout and thermal design guidelines for the BSC020N03LSG. It's essential to follow these guidelines to ensure optimal performance, thermal management, and reliability.
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When selecting a gate driver for the BSC020N03LSG, consider the driver's output current capability, voltage rating, and rise/fall times. Infineon recommends using a gate driver with a output current of at least 2A and a voltage rating that matches the MOSFET's gate-source voltage. The 1EDC and 1EDF families from Infineon are suitable options.
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The SOA limits for the BSC020N03LSG are not explicitly stated in the datasheet. However, Infineon provides a dedicated SOA application note (AN2015-05) that outlines the SOA limits for this device. It's essential to understand and respect these limits to prevent device damage and ensure reliable operation.
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The internal diode of the BSC020N03LSG can lead to unwanted current flow during switching transitions. To mitigate this, use a dedicated diode (e.g., Infineon's IDH04S) in parallel with the MOSFET, or implement a suitable gate driver with integrated diode control. This ensures proper diode management and prevents unwanted current flow.
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To prevent damage and ensure reliability, follow proper storage and handling procedures for the BSC020N03LSG. Store the devices in their original packaging, away from moisture and electrostatic discharge (ESD). Handle the devices with ESD-protected equipment and follow Infineon's recommended handling guidelines.