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Part Details for BSC014N06NSATMA1 by Infineon Technologies AG
Results Overview of BSC014N06NSATMA1 by Infineon Technologies AG
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC014N06NSATMA1 Information
BSC014N06NSATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC014N06NSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47Y7993
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Newark | Mosfet, N-Ch, 60V, 100A, 150Deg C, 156W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC014N06NSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3017 |
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$1.3100 / $1.5500 | Buy Now |
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DISTI #
86AK4421
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Newark | Mosfet, N-Ch, 60V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC014N06NSATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.3200 | Buy Now |
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DISTI #
BSC014N06NSATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 30A/100A TDSON7 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$1.2296 | Buy Now |
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DISTI #
47Y7993
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Avnet Americas | Trans MOSFET N-CH 60V 100A 8-Pin TDSON FL T/R - Product that comes on tape, but is not reeled (Alt: 47Y7993) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 2542 Partner Stock |
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$2.0500 / $3.0200 | Buy Now |
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DISTI #
BSC014N06NSATMA1
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Avnet Americas | Trans MOSFET N-CH 60V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC014N06NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.9792 / $0.9996 | Buy Now |
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DISTI #
726-BSC014N06NSATMA1
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Mouser Electronics | MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS RoHS: Compliant | 0 |
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$1.2200 / $3.1700 | Order Now |
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Future Electronics | Single N-Channel 60 V 1.45 mOhm 89 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 5000Reel |
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$1.1400 | Buy Now |
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Future Electronics | Single N-Channel 60 V 1.45 mOhm 89 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$1.1400 | Buy Now |
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DISTI #
69266669
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Verical | Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R Min Qty: 21 Package Multiple: 1 Date Code: 2323 | Americas - 17914 |
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$1.2000 / $2.0900 | Buy Now |
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DISTI #
85965980
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Verical | Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R Min Qty: 233 Package Multiple: 1 Date Code: 2301 | Americas - 3500 |
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$1.6125 | Buy Now |
Part Details for BSC014N06NSATMA1
BSC014N06NSATMA1 CAD Models
BSC014N06NSATMA1 Part Data Attributes
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BSC014N06NSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC014N06NSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8FL, 8 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | WSON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 261 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 118 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 188 W | |
| Pulsed Drain Current-Max (IDM) | 1044 A | |
| Reference Standard | IEC-68-1; IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
BSC014N06NSATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for BSC014N06NSATMA1 is -55°C to 175°C.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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For optimal performance, use a PCB layout that minimizes the gate-source and drain-source loop areas, and ensures a low-inductance path for the drain current.
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Yes, the BSC014N06NSATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
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Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.