-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for BSC014N06NS by Infineon Technologies AG
Results Overview of BSC014N06NS by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC014N06NS Information
BSC014N06NS by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC014N06NS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
726-BSC014N06NS
|
Mouser Electronics | MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS RoHS: Compliant | 16596 |
|
$1.2700 / $3.1000 | Buy Now |
|
|
Bristol Electronics | 934 |
|
RFQ | ||
|
DISTI #
BSC014N06NS
|
TME | Transistor: N-MOSFET, unipolar, 60V, 100A, 156W, PG-TDSON-8 Min Qty: 1 | 0 |
|
$1.3600 / $2.6200 | RFQ |
|
|
ComSIT USA | MOSFET Power Field-Effect Transistor, 240A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
|
|
RFQ | |
|
DISTI #
SMC-BSC014N06NS
|
Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 5000 |
|
RFQ | |
|
|
MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 6732 |
|
$1.3200 / $1.5800 | Buy Now |
|
DISTI #
BSC014N06NS
|
Maritex | Transistor: N-MOSFET, unipolar, 60V, 100A, 0.00145ohm, 156W, -55+150 deg.C, SMD, TDSON8 Min Qty: 1 Package Multiple: 1 | 6 |
|
$1.3860 / $2.8540 | Buy Now |
|
|
Vyrian | Transistors | 19262 |
|
RFQ | |
|
|
Win Source Electronics | MOSFET N-CH 60V 30A TDSON-8 | 50000 |
|
$0.7500 / $0.9687 | Buy Now |
Part Details for BSC014N06NS
BSC014N06NS CAD Models
BSC014N06NS Part Data Attributes
|
|
BSC014N06NS
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSC014N06NS
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8FL, 8 PIN
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8FL, 8 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 240 A | |
| Drain-source On Resistance-Max | 0.00145 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 118 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 960 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC014N06NS
This table gives cross-reference parts and alternative options found for BSC014N06NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC014N06NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC014N06NSATMA1 | Infineon Technologies AG | $1.5662 | Power Field-Effect Transistor, 30A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8FL, 8 PIN | BSC014N06NS vs BSC014N06NSATMA1 |
BSC014N06NS Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the BSC014N06NS is -40°C to 150°C.
-
To ensure reliability, it is recommended to follow the thermal design guidelines provided by Infineon, and to consider the thermal resistance and power dissipation of the device.
-
The recommended gate resistor value for the BSC014N06NS is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
-
Yes, the BSC014N06NS is suitable for high-frequency switching applications up to 100 kHz, but it's recommended to consult the datasheet and application notes for specific guidance on switching frequency and dead-time requirements.
-
To protect the BSC014N06NS from ESD, it is recommended to follow proper handling and storage procedures, and to use ESD protection devices such as TVS diodes or ESD suppressors in the circuit design.