Part Details for BSB028N06NN3GXUMA1 by Infineon Technologies AG
Results Overview of BSB028N06NN3GXUMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSB028N06NN3GXUMA1 Information
BSB028N06NN3GXUMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSB028N06NN3GXUMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85X4148
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Newark | Mosfet Transistor, N Channel, 90 A, 60 V, 0.0022 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon BSB028N06NN3GXUMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.2400 / $2.7000 | Buy Now |
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DISTI #
BSB028N06NN3GXUMA1
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Avnet Americas | - Tape and Reel (Alt: BSB028N06NN3GXUMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Cytech Systems Limited | MOSFET N-CH 60V 22A/90A 2WDSON | 15000 |
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RFQ | |
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DISTI #
SP000605956
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EBV Elektronik | Power MOSFET N Channel 60 V 90 A 00028 ohm WDSON Surface Mount (Alt: SP000605956) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 60V 90A 78W 2.8m10V30A 4V 1 N-channel WDSON-3 MOSFETs ROHS | 10 |
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$3.7476 / $5.3272 | Buy Now |
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Win Source Electronics | MOSFET N-CH 60V 22A/90A 2WDSON / N-Channel 60 V 22A (Ta), 90A (Tc) 2.2W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™ | 15140 |
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$5.2136 / $7.8203 | Buy Now |
Part Details for BSB028N06NN3GXUMA1
BSB028N06NN3GXUMA1 CAD Models
BSB028N06NN3GXUMA1 Part Data Attributes
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BSB028N06NN3GXUMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSB028N06NN3GXUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, METAL, WDSON-2, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 590 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 78 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Silver/Nickel (Ag/Ni) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSB028N06NN3GXUMA1
This table gives cross-reference parts and alternative options found for BSB028N06NN3GXUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSB028N06NN3GXUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC027N06LS5ATMA1 | Infineon Technologies AG | $1.2488 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8 | BSB028N06NN3GXUMA1 vs BSC027N06LS5ATMA1 |
| SP000453652 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8 | BSB028N06NN3GXUMA1 vs SP000453652 |
| IPB026N06N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | BSB028N06NN3GXUMA1 vs IPB026N06N |
| BSB028N06NN3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | BSB028N06NN3GXUMA1 vs BSB028N06NN3G |
| BSC028N06NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | BSB028N06NN3GXUMA1 vs BSC028N06NS |
BSB028N06NN3GXUMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSB028N06NN3GXUMA1 is -55°C to 175°C.
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To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
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To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the power source. Avoid using vias or narrow traces near the MOSFET.
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Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current-sensing resistor, to prevent damage to the MOSFET.
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For high-power applications, use a suitable heat sink with a thermal interface material (TIM) to ensure efficient heat dissipation. Ensure good airflow and consider using a fan or other cooling mechanism if necessary.