Part Details for BLF647,112 by NXP Semiconductors
Results Overview of BLF647,112 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
BLF647,112 Information
BLF647,112 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BLF647,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70R2868
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Newark | Mosfet, Rf, N Channel, 65V, 18A, Sot-540A-5, Drain Source Voltage Vds:65V, Continuous Drain Current Id:18A, Power Dissipation:290W, Operating Frequency Min:-, Operating Frequency Max:600Mhz, No. Of Pins:5Pins, Channel Type:N Channel Rohs Compliant: Yes |Nxp BLF647,112 RoHS: Compliant Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for BLF647,112
BLF647,112 CAD Models
BLF647,112 Part Data Attributes
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BLF647,112
NXP Semiconductors
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Datasheet
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Compare Parts:
BLF647,112
NXP Semiconductors
BLF647
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT | |
| Pin Count | 2 | |
| Manufacturer Package Code | SOT540A | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 18 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFM-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 290 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for BLF647,112
This table gives cross-reference parts and alternative options found for BLF647,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF647,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BLF647 | NXP Semiconductors | Check for Price | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power | BLF647,112 vs BLF647 |
| 934056498112 | NXP Semiconductors | Check for Price | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 4 PIN, FET RF Power | BLF647,112 vs 934056498112 |
BLF647,112 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the BLF647,112 is 3.8 GHz, but it can be optimized for higher frequencies with proper tuning and layout.
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To optimize biasing, use a combination of voltage and current sensing to ensure the device operates within the recommended operating range. Consult the application note AN11561 for more information.
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Use a 4-layer PCB with a solid ground plane, and ensure good thermal conductivity by using thermal vias and a heat sink. Refer to the application note AN11561 for detailed layout guidelines.
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Yes, the BLF647,112 can be used in a push-pull configuration, but it requires careful design and layout to ensure proper operation and minimize electromagnetic interference (EMI).
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Use ESD protection devices, such as diodes or resistors, in the circuit design, and follow proper handling and storage procedures to prevent ESD damage.