Part Details for BLF645 by NXP Semiconductors
Results Overview of BLF645 by NXP Semiconductors
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Robotics and Drones
BLF645 Information
BLF645 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BLF645
BLF645 CAD Models
BLF645 Part Data Attributes
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BLF645
NXP Semiconductors
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Datasheet
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BLF645
NXP Semiconductors
2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC, PIN 5
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | FLANGE MOUNT, R-CDFM-F5 | |
| Pin Count | 5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 32 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CDFM-F5 | |
| Number of Elements | 2 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
BLF645 Frequently Asked Questions (FAQ)
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NXP provides a recommended PCB layout in the application note AN11542, which includes guidelines for component placement, trace routing, and grounding to minimize parasitic effects and ensure optimal performance.
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To optimize the BLF645 for high-power applications, ensure proper heat sinking, use a sufficient number of via holes to dissipate heat, and consider using a thermal interface material. Additionally, follow the recommended operating conditions and derating guidelines in the datasheet.
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The maximum operating frequency of the BLF645 is 4.4 GHz, but it can be optimized for higher frequencies with proper tuning and layout. However, it's essential to consult with NXP's application engineers or refer to the device's characterization report for specific frequency range support.
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Yes, the BLF645 can be used in a push-pull configuration, but it requires careful design and layout consideration to ensure proper operation. NXP provides guidelines for push-pull configurations in the application note AN11542.
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To troubleshoot common issues with the BLF645, start by verifying the PCB layout and component values, then check the device's operating conditions, biasing, and termination. Consult NXP's application notes and technical support resources for guidance on specific issues.