Datasheets
BFS17WE6327 by:

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

Part Details for BFS17WE6327 by Infineon Technologies AG

Results Overview of BFS17WE6327 by Infineon Technologies AG

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Applications Audio and Video Systems Telecommunications Entertainment and Gaming

BFS17WE6327 Information

BFS17WE6327 by Infineon Technologies AG is an RF Small Signal Bipolar Transistor.
RF Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BFS17WE6327

Part # Distributor Description Stock Price Buy
DISTI # SP000011082
EBV Elektronik RF SMALL SIGNAL BIPOLAR TRANSISTOR 0025A IC 1ELEMENT ULTRA HIGH FREQUENCY BAND SILICON NPN (Alt: SP000011082) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for BFS17WE6327

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BFS17WE6327 Part Data Attributes

BFS17WE6327 Infineon Technologies AG
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BFS17WE6327 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 0.025 A
Collector-Base Capacitance-Max 0.8 pF
Collector-Emitter Voltage-Max 15 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.28 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 2500 MHz

Alternate Parts for BFS17WE6327

This table gives cross-reference parts and alternative options found for BFS17WE6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFS17WE6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BFS17WE6327HTSA1 Infineon Technologies AG Check for Price RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN BFS17WE6327 vs BFS17WE6327HTSA1
BFS17W Infineon Technologies AG Check for Price RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3 BFS17WE6327 vs BFS17W
BFS17ATRL13 NXP Semiconductors Check for Price UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR BFS17WE6327 vs BFS17ATRL13
BFS17AT/R NXP Semiconductors Check for Price TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP RF Small Signal BFS17WE6327 vs BFS17AT/R
BFS17A YAGEO Corporation Check for Price RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN BFS17WE6327 vs BFS17A
BFS17W,115 NXP Semiconductors Check for Price BFS17W - NPN 1 GHz wideband transistor SC-70 3-Pin BFS17WE6327 vs BFS17W,115
BFS17W NXP Semiconductors Check for Price UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, S-MINI, SC-70, 3 PIN BFS17WE6327 vs BFS17W
BFS17A NXP Semiconductors Check for Price UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3 BFS17WE6327 vs BFS17A
BFS17W-T NXP Semiconductors Check for Price TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, S-MINI, SC-70, 3 PIN, BIP RF Small Signal BFS17WE6327 vs BFS17W-T
BFS17WT/R NXP Semiconductors Check for Price TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, S-MINI, SC-70, 3 PIN, BIP RF Small Signal BFS17WE6327 vs BFS17WT/R

BFS17WE6327 Related Parts

BFS17WE6327 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2014-01, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).

  • Infineon provides a component selection guide in their application note AN2014-01, which includes recommendations for external components such as capacitors, resistors, and inductors. Additionally, the datasheet provides a list of recommended components and their corresponding values.

  • The thermal resistance of the BFS17WE6327 package is not explicitly stated in the datasheet. However, according to Infineon's thermal modeling guidelines, the thermal resistance of the package can be estimated using the thermal resistance of the die (Rth_jc) and the thermal resistance of the package (Rth jc-case). These values can be found in the datasheet or by contacting Infineon's support team.

  • The BFS17WE6327 does not have built-in overcurrent protection. However, Infineon recommends implementing external overcurrent protection using a dedicated overcurrent protection IC or a discrete circuit. The application note AN2014-01 provides guidelines for implementing overcurrent protection.

  • The maximum operating temperature range for the BFS17WE6327 is -40°C to 150°C, as stated in the datasheet. However, the device's performance and reliability may degrade at higher temperatures, and Infineon recommends operating the device within a temperature range of -40°C to 125°C for optimal performance.

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