Datasheets
BDX34B by:

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

Part Details for BDX34B by SPC Multicomp

Results Overview of BDX34B by SPC Multicomp

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BDX34B Information

BDX34B by SPC Multicomp is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for BDX34B

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BDX34B Part Data Attributes

BDX34B SPC Multicomp
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BDX34B SPC Multicomp Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Part Life Cycle Code Active
Ihs Manufacturer MULTICOMP PRO
Package Description TO-220, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Multicomp Pro
Case Connection COLLECTOR
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 80 V
Configuration DARLINGTON WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

BDX34B Related Parts

BDX34B Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the BDX34B is a standard TO-220 package with a minimum pad size of 5.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.

  • While the BDX34B is suitable for switching applications, its high-frequency performance is limited due to its relatively high capacitance and inductance. For high-frequency switching, consider using a transistor with lower capacitance and inductance, such as the BDX54B or BDX64B.

  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, keep the junction temperature below 150°C, and avoid exceeding the maximum power dissipation. Also, consider using a thermal interface material to improve heat transfer between the transistor and heat sink.

  • The recommended derating curve for the BDX34B is to reduce the maximum power dissipation by 2.5mW/°C above 25°C. This ensures reliable operation and prevents thermal runaway.

  • While the BDX34B is primarily designed for switching applications, it can be used in linear amplifier applications with careful consideration of its linearity, gain, and thermal performance. However, a more suitable transistor for linear amplifiers might be the 2N3055 or MJ15024.

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