Part Details for BDW84C by Central Semiconductor Corp
Results Overview of BDW84C by Central Semiconductor Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BDW84C Information
BDW84C by Central Semiconductor Corp is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BDW84C
BDW84C CAD Models
BDW84C Part Data Attributes
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BDW84C
Central Semiconductor Corp
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Datasheet
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BDW84C
Central Semiconductor Corp
Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Central Semiconductor | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 15 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON | |
DC Current Gain-Min (hFE) | 750 | |
JEDEC-95 Code | TO-218 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 150 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for BDW84C
This table gives cross-reference parts and alternative options found for BDW84C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BDW84C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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BDW84C | Bourns Inc | Check for Price | Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 | BDW84C vs BDW84C |
BDW84C | STMicroelectronics | Check for Price | 15A, 100V, PNP, Si, POWER TRANSISTOR, TO-218, PLASTIC PACKAGE-3 | BDW84C vs BDW84C |
BDW84C | JW Miller | Check for Price | 15A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, FM-3 | BDW84C vs BDW84C |
BDW84C-S | Bourns Inc | Check for Price | Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 | BDW84C vs BDW84C-S |
BDW84C | Power Innovations International, Inc. | Check for Price | Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3 | BDW84C vs BDW84C |
BDW84CR1 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN | BDW84C vs BDW84CR1 |
BDW84CLEADFREE | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin | BDW84C vs BDW84CLEADFREE |
BDW84C Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the BDW84C is not explicitly stated in the datasheet. However, it's recommended to follow the general guidelines for SOA calculations, considering the device's voltage and current ratings, thermal resistance, and package type.
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To ensure the BDW84C is properly biased for linear operation, follow these steps: 1) Choose a suitable collector-emitter voltage (Vce) and collector current (Ic) based on the application requirements. 2) Select a base-emitter voltage (Vbe) that provides the desired current gain (β). 3) Use a base resistor (Rb) to limit the base current and prevent overheating. 4) Verify the transistor is operating within its recommended operating conditions.
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The recommended storage temperature range for the BDW84C is typically between -40°C to 125°C, as specified in the datasheet. However, it's essential to follow proper storage and handling procedures to prevent damage or degradation.
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While the BDW84C is primarily designed for linear applications, it can be used in switching applications with caution. Ensure the transistor is properly biased, and the switching frequency is within the device's capabilities. Additionally, consider the device's rise and fall times, and ensure the application meets the recommended operating conditions.
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To handle ESD protection for the BDW84C, follow these guidelines: 1) Handle the device by the body or use an anti-static wrist strap. 2) Use an ESD-safe work surface and tools. 3) Store the device in an anti-static package or bag. 4) Implement ESD protection circuits or devices in the application, such as TVS diodes or ESD protection arrays.