Datasheets
BDP948H6433XTMA1 by: Infineon Technologies AG

RF Power Bipolar Transistor, 1-Element, Silicon, PNP, ROHS COMPLIANT PACKAGE-4

Part Details for BDP948H6433XTMA1 by Infineon Technologies AG

Results Overview of BDP948H6433XTMA1 by Infineon Technologies AG

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BDP948H6433XTMA1 Information

BDP948H6433XTMA1 by Infineon Technologies AG is an RF Power Bipolar Transistor.
RF Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BDP948H6433XTMA1

Part # Distributor Description Stock Price Buy
DISTI # BDP948H6433XTMA1-ND
DigiKey TRANS PNP 45V 3A PG-SOT223-4 Min Qty: 4000 Lead time: 4 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 4,000 $0.2779
  • 8,000 $0.2576
  • 12,000 $0.2472
  • 20,000 $0.2421
$0.2421 / $0.2779 Buy Now
DISTI # BDP948H6433XTMA1
Avnet Americas Trans GP BJT PNP 45V 3A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BDP948H6433XTMA1) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 4 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.2528
  • 8,000 $0.2489
  • 16,000 $0.2450
  • 24,000 $0.2412
  • 32,000 $0.2400
$0.2400 / $0.2528 Buy Now
DISTI # 726-BDP948H6433XTMA1
Mouser Electronics Bipolar Transistors - BJT AF TRANSISTORS RoHS: Compliant 322
  • 1 $0.8900
  • 10 $0.6460
  • 100 $0.4410
  • 500 $0.3680
  • 1,000 $0.3130
  • 2,000 $0.2840
  • 4,000 $0.2770
$0.2770 / $0.8900 Buy Now
DISTI # 69764615
Verical Trans GP BJT PNP 45V 3A 5000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Date Code: 2325 Americas - 56000
  • 4,000 $0.3119
$0.3119 Buy Now
DISTI # TDSTD8709
Rutronik PNP TRANSISTOR 45V 3A 5W SOT223 RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel Stock DE - 20000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 4,000 $0.4133
  • 8,000 $0.3956
  • 12,000 $0.3868
  • 16,000 $0.3484
$0.3484 / $0.4133 Buy Now
DISTI # SP000748380
EBV Elektronik Trans GP BJT PNP 45V 3A 4Pin SOT223 TR (Alt: SP000748380) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 5 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BDP948H6433XTMA1

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BDP948H6433XTMA1 Part Data Attributes

BDP948H6433XTMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BDP948H6433XTMA1 Infineon Technologies AG RF Power Bipolar Transistor, 1-Element, Silicon, PNP, ROHS COMPLIANT PACKAGE-4
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT PACKAGE-4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 45 V
Configuration SINGLE
DC Current Gain-Min (hFE) 50
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

BDP948H6433XTMA1 Frequently Asked Questions (FAQ)

  • For optimal performance, it's recommended to follow Infineon's guidelines for PCB layout and thermal management. This includes using a multi-layer PCB with a solid ground plane, placing thermal vias under the device, and using a heat sink with a thermal interface material. Additionally, ensure good airflow and avoid blocking airflow around the device.

  • To ensure EMC compliance, follow Infineon's guidelines for PCB layout, component placement, and shielding. Use a metal shield around the device, and ensure proper grounding and decoupling. Additionally, consider using EMI filters and common-mode chokes to reduce emissions.

  • The BDP948H6433XTMA1 is designed to operate in high-temperature and high-stress environments. According to Infineon's reliability data, the device can operate for up to 10 years at 150°C junction temperature, with a failure rate of less than 1 FIT (failures per billion hours). However, actual lifespan may vary depending on specific application conditions.

  • Yes, the BDP948H6433XTMA1 can be used in redundant or parallel configurations to achieve higher power or reliability. However, this requires careful design and simulation to ensure proper current sharing, thermal management, and fault tolerance. Consult Infineon's application notes and technical support for guidance on implementing such configurations.

  • The BDP948H6433XTMA1 has built-in protection mechanisms for over-temperature, over-current, and under-voltage conditions. Failure modes may include thermal runaway, electrical overstress, or manufacturing defects. Implement fault detection mechanisms such as temperature monitoring, current sensing, and voltage monitoring to detect potential failures and take corrective action.

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