Datasheets
BD681 by:

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Details for BD681 by Samsung Semiconductor

Results Overview of BD681 by Samsung Semiconductor

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BD681 Information

BD681 by Samsung Semiconductor is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for BD681

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BD681 Part Data Attributes

BD681 Samsung Semiconductor
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BD681 Samsung Semiconductor Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON
DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 40 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 10 MHz

Alternate Parts for BD681

This table gives cross-reference parts and alternative options found for BD681. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BD681, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BD681S Rochester Electronics LLC Check for Price 4A, 100V, NPN, Si, POWER TRANSISTOR, TO-126 BD681 vs BD681S
BD681 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 BD681 vs BD681
BD681G Rochester Electronics LLC Check for Price 4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN BD681 vs BD681G
Part Number Manufacturer Composite Price Description Compare
BD681S onsemi Check for Price Medium Power NPN Darlington Bipolar Power Transistor, TO-126-3, 2000-BLKBG BD681 vs BD681S
BD681S Fairchild Semiconductor Corporation Check for Price NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 2000/BULK BD681 vs BD681S
BD681 Baneasa SA Check for Price Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin BD681 vs BD681
BD681STU onsemi Check for Price Medium Power NPN Darlington Bipolar Power Transistor, TO-126-3, 1920-TUBE BD681 vs BD681STU
BD681 Crimson Semiconductor Inc Check for Price Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, BD681 vs BD681
BD681 Continental Device India Ltd Check for Price Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 BD681 vs BD681
BD681STU Fairchild Semiconductor Corporation Check for Price NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL BD681 vs BD681STU

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