-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
1.5 A, 80 V NPN Power Bipolar Junction Transistor, TO-126-3, 1920-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BD13910STU by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
82C0699
|
Newark | Bipolar Transistors Rohs Compliant: Yes |Onsemi BD13910STU RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 8 |
|
$0.2510 / $0.3190 | Buy Now |
DISTI #
BD13910STUOS-ND
|
DigiKey | TRANS NPN 80V 1.5A TO-126-3 Min Qty: 1 Lead time: 10 Weeks Container: Tube |
1272 In Stock |
|
$0.3041 / $1.0700 | Buy Now |
DISTI #
82C0699
|
Avnet Americas | Trans GP BJT NPN 80V 1.5A 3-Pin(3+Tab) TO-126 Rail - Bulk (Alt: 82C0699) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks, 5 Days Container: Bulk | 8 Partner Stock |
|
$0.2670 / $0.3040 | Buy Now |
DISTI #
BD13910STU
|
Avnet Americas | Trans GP BJT NPN 80V 1.5A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube (Alt: BD13910STU) RoHS: Compliant Min Qty: 3840 Package Multiple: 1920 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
|
RFQ | |
DISTI #
512-BD13910STU
|
Mouser Electronics | Bipolar Transistors - BJT NPN Si Transistor Epitaxial RoHS: Compliant | 1811 |
|
$0.2750 / $1.0200 | Buy Now |
DISTI #
V36:1790_06298197
|
Arrow Electronics | Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin TO-126 Tube RoHS: Compliant Min Qty: 1920 Package Multiple: 1920 Lead time: 10 Weeks Date Code: 2410 | Americas - 3040 |
|
$0.2745 | Buy Now |
|
Onlinecomponents.com | Bipolar (BJT) Single Transistor, NPN, 80 V, 12.5 W, 1.5 A, 63 |
3730 In Stock |
|
$0.2121 / $0.2616 | Buy Now |
DISTI #
85964570
|
Verical | Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin TO-126 Tube RoHS: Compliant Min Qty: 1011 Package Multiple: 1 Date Code: 2201 | Americas - 5760 |
|
$0.3711 | Buy Now |
DISTI #
83591392
|
Verical | Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin TO-126 Tube RoHS: Compliant Min Qty: 200 Package Multiple: 100 Date Code: 2425 | Americas - 3700 |
|
$0.2885 / $0.3401 | Buy Now |
DISTI #
79015939
|
Verical | Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin TO-126 Tube RoHS: Compliant Min Qty: 1920 Package Multiple: 1920 Date Code: 2410 | Americas - 1920 |
|
$0.1984 / $0.2086 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
BD13910STU
onsemi
Buy Now
Datasheet
|
Compare Parts:
BD13910STU
onsemi
1.5 A, 80 V NPN Power Bipolar Junction Transistor, TO-126-3, 1920-TUBE
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-126-3 | |
Manufacturer Package Code | 340AS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 7 Weeks, 5 Days | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 1.5 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 63 | |
JEDEC-95 Code | TO-126 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 13 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz |
This table gives cross-reference parts and alternative options found for BD13910STU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BD13910STU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BD13910S | Fairchild Semiconductor Corporation | Check for Price | NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 2000/BULK | BD13910STU vs BD13910S |
BD13910S | onsemi | Check for Price | 1.5 A, 80 V NPN Power Bipolar Junction Transistor, TO-126-3, 2000-BLKBG | BD13910STU vs BD13910S |
A good PCB layout for the BD13910STU involves keeping the input and output traces short and separate, using a solid ground plane, and placing decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
To ensure the BD13910STU operates within its SOA, monitor the device's junction temperature, output current, and input voltage. Use thermal design and heat sinking to keep the junction temperature below 150°C. Also, ensure the output current is within the specified range, and the input voltage is within the recommended operating range.
For thermal design, consider the device's power dissipation, thermal resistance, and junction temperature. Use a heat sink with a low thermal resistance, ensure good thermal interface material (TIM) contact, and provide adequate airflow. A thermal design calculator or simulation tool can help optimize the design.
To protect the BD13910STU, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits. OVP can be achieved using a voltage regulator or a zener diode, while OCP can be implemented using a current sense resistor and a comparator. Additionally, consider using a fuse or a polyfuse for added protection.
To minimize EMI and ensure EMC compliance, use a shielded enclosure, keep the PCB layout compact, and use a common-mode choke or ferrite beads on the input and output lines. Also, consider using a snubber circuit to reduce electromagnetic interference (EMI).